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Researcher profile

A. Tredicucci

A. Tredicucci contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.ins-detphysics.optics

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Published work

3 published item(s)

preprint2022arXiv

Optomechanical Modulation Spectroscopy of Bound-States-In-The-Continuum in a dielectric metasurface

Elusive features in photonic and electronic devices can be detected by means of advanced, time-domain spectroscopic techniques. In this letter we introduce a novel kind of modulation spectroscopy, based on the optomechanical interaction of photonic and mechanical modes. Applying the technique to a Si metasurface and its drum-like mechanical modes, we detect narrow-band quasi-Bound-State-in-the-Continuum (q-BIC) modes close to normal incidence, where their measurement can be hindered by a high symmetry protection and undesired background modes. Showing a visibility enhancement of more than one order of magnitude, the optomechanical modulation spectroscopy can be an innovative tool for precise spectroscopy of a wide set of photonic devices, including the goal of measuring purely symmetry protected BIC resonances.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Graphene field effect transistors as room-temperature Terahertz detectors

The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6]. Owing to its high carrier mobility, gapless spectrum, and frequency-independent absorption coefficient, it has been recognized as a very promising element for the development of detectors and modulators operating in the Terahertz (THz) region of the electromagnetic spectrum (wavelengths in the hundreds of micrometers range), which is still severely lacking in terms of solid-state devices. Here we demonstrate efficient THz detectors based on antenna-coupled graphene field-effect transistors (FETs). These exploit the non-linear FET response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature (RT) operation at 0.3 THz, with noise equivalent power (NEP) levels < 30 nW/Hz^(1/2), showing that our devices are well beyond a proof-of-concept phase and can already be used in a realistic setting, enabling large area, fast imaging of macroscopic samples.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Low Cost Thermopile Detectors for THz Imaging and Sensing

We evaluate 2 thermopile sensors as convenient detector options for a modern integrated THz imaging system. Both a commercial single pixel device and a 32x32 pixel FPA are utilized in a simple setup with a single optical element to achieve an outstanding resolution and SNR performance. Either a cryogenically cooled quantum cascade laser (QCL) or a room temperature electronic THz multiplier chain is used as source.

0 citations0 reviewsNo code linkedOpen access