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A. Tosato

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cond-mat.mes-hall cond-mat.str-el quant-ph

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preprint2022arXiv

A high-mobility hole bilayer in a germanium double quantum well

We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34 $\times$ 10 $^5$ cm $^2$ /Vs and a low percolation density of 2.38 $\times$ 10 $^{10}$ cm $^{-2}$ . We resolve the individual population of the channels from the interference patterns of the Landau fan diagram. At a density of 2.0 $\times$ 10 $^{11}$ cm $^{-2}$ the system is in resonance and we observe an anti-crossing of the first two bilayer subbands characterized by a symmetric-antisymmetric gap of $\sim$ 0.69 meV, in agreement with Schrödinger-Poisson simulations.

preprint2022arXiv

Lightly-strained germanium quantum wells with hole mobility exceeding one million

We demonstrate that a lightly-strained germanium channel ( $\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si $_{0.1}$ Ge $_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1 $\times$ 10 $^{6}$ cm $^{2}$ /Vs and percolation density less than 5 $\times$ 10 $^{10}$ cm $^{-2}$ . This low disorder 2D hole system shows tunable fractional quantum Hall effect at low density and low magnetic field. The low-disorder and small effective mass (0.068 $m_e$ ) defines lightly-strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware.

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