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Researcher profile

A. Stroppa

A. Stroppa contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.other

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Published work

16 published item(s)

preprint2014arXiv

Tuning order-by-disorder multiferroicity in CuO by doping

The high Curie temperature multiferroic compound, CuO, has a quasidegenerate magnetic ground state that makes it prone to manipulation by the so called ``order-by-disorder'' mechanism. First principle computations supplemented with Monte Carlo simulations and experiments show that isovalent doping allows to stabilize the multiferroic phase in non-ferroelectric regions of the pristine material phase-diagram with experiments reaching a 250% widening of the ferroelectric temperature window with 5% of Zn doping. Our results allow to validate the importance of a quasidegenerate ground state on promoting multiferroicity on CuO at high temperatures and open a path to the material engineering of new multiferroic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Ab-initio study of the relation between electric polarization and electric field gradients in ferroelectrics

The hyperfine interaction between the quadrupole moment of atomic nuclei and the electric field gradient (EFG) provides information on the electronic charge distribution close to a given atomic site. In ferroelectric materials, the loss of inversion symmetry of the electronic charge distribution is necessary for the appearance of the electric polarization. We present first-principles density functional theory calculations of ferroelectrics such as BaTiO3, KNbO3, PbTiO3 and other oxides with perovskite structures, by focusing on both EFG tensors and polarization. We analyze the EFG tensor properties such as orientation and correlation between components and their link with electric polarization. This work supports previous studies of ferroelectric materials where a relation between EFG tensors and polarization was observed, which may be exploited to study ferroelectric order when standard techniques to measure polarization are not easily applied.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Exceptionally large room-temperature ferroelectric polarization in the novel PbNiO3 multiferroic oxide

We present a study based on several advanced First-Principles methods, of the recently synthesized PbNiO3 [J. Am. Chem. Soc 133, 16920 (2011)], a rhombohedral antiferromagnetic insulator which crystallizes in the highly distorted R3c crystal structure. We find this compound electrically polarized, with a very large electric polarization of about 100 (\muC/cm)^2, thus even exceeding the polarization of well-known BiFeO3. PbNiO3 is a proper ferroelectric, with polarization driven by large Pb-O polar displacements along the [111] direction. Contrarily to naive expectations, a definite ionic charge of 4+ for Pb ion can not be assigned, and in fact the large Pb 6s-O 2p hybridization drives the ferroelectric distortion through a lone-pair mechanism similar to that of other Pb- and Bi-based multiferroics

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Revisiting the Mn-doped Ge using the Heyd-Scuseria-Ernzerhof hybrid functional

We perform a comparative \textit{ab-initio} study of Mn-doped Germanium semiconductor using the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional, DFT+$U$ and Heyd-Scuseria-Ernzerhof hybrid functional (HSE). We show that the HSE functional is able to correctly account for the relevant ground state properties of the host matrix as well as of Mn-doped semiconductor. Although the DFT+$U$ and the HSE description are very similar, some differences still remain. In particular, the half-metallicity is lost using DFT+$U$ when a suitable $U$ value, tuned to recover the photoemission spectra, is employed. For comparison, we also discuss the case of Mn in Silicon.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

CdV2O4: A rare example of a collinear multiferroic spinel

By studying the dielectric properties of the geometrically frustrated spinel CdV2O4, we observe ferroelectricity developing at the transition into the collinear antiferromagnetic ground state. In this multiferroic spinel, ferroelectricity is driven by local magnetostriction and not by the more common scenario of spiral magnetism. The experimental findings are corroborated by ab-initio calculations of the electric polarization and the underlying spin and orbital order. The results point towards a charge rearrangement due to dimerization, where electronic correlations and the proximity to the insulator-metal transition play an important role.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

The shortcomings of semi-local and hybrid functionals: what we can learn from surface science studies

A study of the adsorption of CO on late 4d and $5d$ transition metal (111) surfaces (Ru, Rh, Pd, Ag, Os, Ir, and Pt) considering atop and hollow site adsorption is presented. The applied functionals include the gradient corrected PBE and BLYP functional, and the corresponding hybrid Hartree-Fock density functionals HSE and B3LYP. We find that PBE based hybrid functionals (specifically HSE) yield, with the exception of Pt, the correct site order on all considered metals, but they also considerably overestimate the adsorption energies compared to experiment. On the other hand, the semi-local BLYP functional and the corresponding hybrid functional B3LYP yield very satisfactory adsorption energies and the correct adsorption site for all surfaces. We are thus faced with a Procrustean problem: the B3LYP and BLYP functionals seem to be the overall best choice for describing adsorption on metal surfaces, but they simultaneously fail to account well for the properties of the metal, vastly overestimating the equilibrium volume and underestimating the atomization energies. Setting out from these observations, general conclusions are drawn on the relative merits and drawbacks of various semi-local and hybrid functionals. The discussion includes a revised version of the PBE functional specifically optimized for bulk properties and surface energies (PBEsol), a revised version of the PBE functional specifically optimized to predict accurate adsorption energies (rPBE), as well as the aforementioned BLYP functional. We conclude that no semi-local functional is capable to describe all aspects properly, and including non-local exchange also only improves some, but worsens other properties.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Unraveling the Jahn-Teller effect in Mn doped GaN using the Heyd-Scuseria-Ernzerhof hybrid functional

We present an ab-initio study of the Mn substitution for Ga in GaN using the Heyd-Scuseria-Ernzerhof hybrid functional (HSE). Contrary to semi-local functionals, the majority Mn t$_{2}$ manifold splits into an occupied doublet and an unoccupied singlet well above the Fermi-level resulting in an insulating groundstate, which is further stabilized by a sizeable Jahn-Teller distortion. The predictions are confirmed using $GW$ calculations and are in agreement with experiment. A transition from a localized to a delocalized Mn hole state is predicted from GaN to GaAs.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

{Spin polarization tuning in Mn$_{x}$Fe$_{1-x}$Ge$_{3}$

Experimentally, the intermetallic compound Mn$_{4}$FeGe$_{3}$ has been recently shown to exhibit enhanced magnetic properties and spin polarization compared to the Mn$_{5}$Ge$_{3}$ parent compound. The present {\em ab-initio} study focusses on the effect of Fe substitution on the electronic and magnetic properties of the compound. Our calculations reveal that the changes on the Fermi surface of the doped compound are remarkable and provide explanations for the enhanced spin-polarization observed. Finally, we show that it is indeed possible to tune the degree of spin-polarization upon Fe doping, thus making the Mn$_{1-x}$Fe$_{x}$Ge$_{3}$ intermetallic alloy very promising for future spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

CO adsorption on metal surfaces: a hybrid functional study with plane wave basis set

We present a detailed study of the adsorption of CO on Cu, Rh, and Pt (111) surfaces in top and hollow sites. The study has been performed using the local density approximation, the gradient corrected functional PBE, and the hybrid Hartree-Fock density functionals PBE0 and HSE03 within the framework of generalized Kohn-Sham density functional theory using a plane-wave basis set. As expected, the LDA and GGA functionals show a tendency to favor the hollow sites, at variance with experimental findings that give the top site as the most stable adsorption site. The PBE0 and HSE03 functionals reduce this tendency. In fact, they predict the correct adsorption site for Cu and Rh but fail for Pt. But even in this case, the hybrid functional destabilizes the hollow site by 50 meV compared to the PBE functional. The results of the total energy calculations are presented along with an analysis of the projected density of states.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surface

We present a combined experimental and computational study of the (110) cross-sectional surface of Mn $δ$-doped GaAs samples. We focus our study on three different selected Mn defect configurations not previously studied in details, namely surface interstitial Mn, isolated and in pairs, and substitutional Mn atoms on cationic sites (Mn$_{\rm Ga}$) in the first subsurface layer. The sensitivity of the STM images to the specific local environment allows to distinguish between Mn interstitials with nearest neighbor As atoms (Int$_{\rm As}$) rather than Ga atoms (Int$_{\rm Ga}$), and to identify the fingerprint of peculiar satellite features around subsurface substitutional Mn. The simulated STM maps for Int$_{\rm As}$, both isolated and in pairs, and Mn$_{\rm Ga}$ in the first subsurface layer are consistent with some experimental images hitherto not fully characterized.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Magneto-optical properties of (Ga,Mn)As: an ab--initio determination

The magneto-optical properties of (Ga,Mn)As have been determined within density functional theory using the highly precise full-potential linear augmented plane wave (FLAPW) method. A detailed investigation of the electronic and magnetic properties in connection to the magneto-optic effects is reported. The spectral features of the optical tensor in the 0-10 eV energy range are analyzed in terms of the band structure and density of states and the essential role of the dipole matrix elements is highlighted by means of Brillouin zone dissection. Using an explicit representation of the Kerr angle in terms of real and imaginary parts of the tensor components, a careful analysis of the Kerr spectra is also presented. The results of our study can be summarized as follows: i) different types of interband transitions do contribute in shaping the conductivity tensor; ii) the dipole matrix elements are important in obtaining the correct optical spectra; iii) different regions in the irreducible Brillouin zone contribute to the conductivity very differently; iv) a minimum in the Re $σ_{xx}$ spectra can give rise to a large Kerr rotation angle in the same energy region; and v) materials engineering via the magneto-optical Kerr effect is possible provided that the electronic structure of the material can be tuned in such a way as to \emph{enhance} the depth of the minima of Re $σ_{xx}$.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Non-collinear Magnetic states of Mn5Ge3 compound

Mn5Ge3 thin films epitaxially grown on Ge(111) exhibit metallic conductivity and strong ferromagnetism up to about 300 K. Recent experiments suggest a non-collinear spin structure. In order to gain deep insights into the magnetic structure of this compound, we have performed fully unconstrained ab-initio pseudopotential calculations within density functional theory, investigating the different magnetic states corresponding to Collinear (C) and Non-Collinear (NC) spin configurations. We focus on their relative stability under pressure and strain field. Under pressure, the C and NC configurations are degenerate, suggesting the possible occurrence of accidental magnetic degeneracy also in Mn5Ge3 real samples. We found a continuous transition from a ferromagnetic C low-spin state at small volumes to a NC high-spin state at higher volumes. Remarkably, the degeneracy is definitely removed under the effect of uniaxial strain: in particular, NC spin configurations is favoured under tensile uniaxial strain.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Composition and strain dependence of band offsets at metamorphic In$_{x}$Ga$_{1-x}$As/In$_{y}$Al$_{1-y}$As heterostructures

We have studied the In$_{x}$Ga$_{1-x}$As/In$_{y}$Al$_{1-y}$As (001) interface using first-principles ab-initio pseudopotential calculations, focusing on the effects of alloy composition and strain state on the electronic properties. In particular we estimate a valence band offset (VBO) of 0.11 eV (InGaAs higher), including spin-orbit and self-energy corrections, for a strain-compensated configuration with homogenous composition $x=y=0.75$ on a lattice-matched substrate. Unintentional composition fluctuations which are typically limited to a few percent and different short-range order effects give rise only to small variations on the VBO, of the order of 0.1 eV or less, whereas intentional substantial changes in the alloys composition allow to achieve a high tunability of band offsets. We predict a VBO varying in a range of about 1.1 eV for interfaces between the pure arsenides in different strain states as extreme cases of composition variation at In$_{x}$Ga$_{1-x}$As/In$_{y}$Al$_{1-y}$As heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Structural and magnetic properties of Mn-doped GaAs(110) surface

We have investigated STM images of the (110) cross-sectional surface of Mn-doped GaAs using first principles total-energy pseudopotential calculations. We focus on configurations with Mn interstitial in the uppermost surface layers. In particular, we have found that Mn impurities, surrounded by Ga or As atoms, introduce in both cases strong local distortions in the GaAs(110) surface, with bond length variations up to 8 % on surface and non-negligible relaxations effects propagating up to the third sub-surface layer. In both cases interstitial Mn induces a spin-polarization on its nearest neighbors, giving rise to a ferromagnetic Mn-As and to antiferromagnetic Mn-Ga configuration.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

ZnSe/GaAs(001) heterostructures with defected interfaces: structural, thermodynamic and electronic properties

We have performed accurate \emph{ab--initio} pseudopotential calculations for the structural and electronic properties of ZnSe/GaAs(001) heterostructures with interface configurations accounting for charge neutrality prescriptions. Beside the simplest configurations with atomic interdiffusion we consider also some configurations characterized by As depletion and cation vacancies, motivated by the recent successfull growth of ZnSe/GaAs pseudomorphic structures with minimum stacking fault density characterized by the presence of a defected (Zn,Ga)Se alloy in the interface region. We find that--under particular thermodynamic conditions--some defected configurations are favoured with respect to undefected ones with simple anion or cation mixing, and that the calculated band offsets for some defected structures are compatible with those measured. Although it is not possible to extract indications about the precise interface composition and vacancy concentration, our results support the experimental indication of (Zn,Ga)Se defected compounds in high-quality ZnSe/GaAs(001) heterojunctions with low native stacking fault density. The range of measured band offset suggests that different atoms at interfaces rearrange, with possible presence of vacancies, in such a way that not only local charges but also ionic dipoles are vanishing.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Structural properties and stability of defected ZnSe/GaAs(001) interfaces

Accurate ab-initio pseudopotential calculations within density functional theory in the LDA approximation have been performed for structural properties and stability of ZnSe/GaAs(001) defected heterostructures. There is a strong experimental evidence that ZnSe/GaAs heterostructures with minimum stacking fault density are related to the presence of a substantial concentration of Ga vacancies at interface. In order to gain insights into the still unknown microscopic maechanism governing their formation and stability, we compared the relative stability of some simple selected interface configurations, chosen taking into account charge neutrality prescription and allowing the presence of Ga vacancy next to the interface. Remarkably, our results show that, under particular thermodynamic conditions, some interfaces with vacancies are favoured over undefected ones.

0 citations0 reviewsNo code linkedOpen access