Researcher profile

A. Smontara

A. Smontara contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - Baseline
3works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2013arXiv

Universal sheet resistance and revised phase diagram of the cuprate high-temperature superconductors

Upon introducing charge carriers into the copper-oxygen sheets of the enigmatic lamellar cuprates the ground state evolves from an insulator into a superconductor, and eventually into a seemingly conventional metal (a Fermi liquid). Much has remained elusive about the nature of this evolution and about the peculiar metallic state at intermediate hole-carrier concentrations (p). The planar resistivity of this unconventional metal exhibits a linear temperature dependence (ρ$\propto$ T) that is disrupted upon cooling toward the superconducting state by the opening of a partial gap (the pseudogap) on the Fermi surface. Here we first demonstrate for the quintessential compound HgBa$_2$CuO$_{4+δ}$ a dramatic switch from linear to purely quadratic (Fermi-liquid-like, ρ$\propto$ T$^2$) resistive behavior in the pseudogap regime. Despite the considerable variation in crystal structures and disorder among different compounds, our result together with prior work gives new insight into the p-T phase diagram and reveals the fundamental resistance per copper-oxygen sheet in both linear (ρ_S = A_{1S} T) and quadratic (ρ_S = A_{2S} T$^2$) regimes, with A_{1S} $\propto$ A_{2S} $\propto$ 1/p. Theoretical models can now be benchmarked against this remarkably simple universal behavior. Deviations from this underlying behavior can be expected to lead to new insights into the non-universal features exhibited by certain compounds.

preprint2012arXiv

Phonon scattering in quasicrystalline i-Al_{72}Pd_{19.5}Mn_{8.5}: A study of the low-temperature thermal conductivity

We measured the thermal conductivity of an icosahedral quasicrystal i-Al_{72}Pd_{19.5}Mn_{8.5} in the temperature range between 0.4 K and 300 K. The analysis of the low-temperature results was based on a Debye-type model. The results of the analysis for the two temperature regions of 0.4 K <T<40 K and 0.4 K <T<1 K, are not consistent in the sense that a tunnelling-states contribution to phonon scattering is verified only for 0.4 K <T<1 K. The same fitting procedure indicates that structural defects of the stacking-fault type are an important source of phonon scattering. Their physical presence was cleary identified by a transmission electron microscopy experiment.

preprint2010arXiv

High pressure study of transport properties in Co$_{1/3}$NbS$_2$

This is the first study of the effect of pressure on transition metal dichalcogenides intercalated by atoms that order magnetically. Co$_{1/3}$NbS$_2$ is a layered system where the intercalated Co atoms order antiferromagnetically at T$_N$ = 26 K at ambient pressure. We have conducted a detailed study of dc-resistivity ($ρ$), thermoelectric power (S) and thermal conductivity ($κ$). We found that at ambient pressure the magnetic transition corresponds to a well pronounced peak in dS/dT, as well as to a kink in the dc-resistivity. The effect of ordering on the thermal conductivity is rather small but, surprisingly, more pronounced in the lattice contribution than in the electronic contribution to $κ$. Under pressure, the resistivity increases in the high temperature range, contrary to all previous measurements in other layered transition metal dichalcogenides (TMD). In the low temperature range, the strong dependences of thermopower and resistivity on pressure are observed below TN, which, in turn, also depends on pressure at rate of dT$_N$/dp $\approx$ -1 K/kbar. Several possible microscopic explanations of the reduction of the ordering temperature and the evolution of the transport properties with pressure are discussed.