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A. Sawada

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cond-mat.mes-hall cond-mat.str-el

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preprint2013arXiv

Spin blocker made of semiconductor double quantum well using the Rashba effect

We propose a lateral spin-blockade device that uses an InGaAs/InAlAs double quantum well (DQW), where the values of the Rashba spin-orbit parameter $α_{\rm R}$ are opposite in sign but equal in magnitude between the constituent quantum wells (QW). By tuning the channel length of DQW and the magnitude of the externally applied in-plane magnetic field, one can block the transmission of one spin (e.g., spin-down) component, leading to a spin-polarized current. Such a spin-blocking effect, brought about by wave vector matching of the spin-split Fermi surfaces between the two QWs, paves the way for a new scheme of spin-polarized electric current generation for future spintronics applications based on semiconductor band engineering.

preprint2010arXiv

Anisotropy of Magnetoresistance Hysteresis around the $ν=2/3$ Quantum Hall State in Tilted Magnetic Field

We present an anisotropy of the hysteretic transport around the spin transition point at Landau level filling factor $ν=2/3$ in tilted magnetic field. When the direction of the in-plane component of the magnetic field $B_{\parallel}$ is normal to the probe current $I$, a strong hysteretic transport due to the current-induced nuclear spin polarization occurs. When $B_{\parallel}$ is parallel to $I$, on the other hand, the hysteresis almost disappears. We also demonstrate that the nuclear spin-lattice relaxation rate $T_{1}^{-1}$ at the transition point increases with decreasing angle between the directions of $B_{\parallel}$ and $I$. These results suggest that the morphology of electron spin domains around $ν=2/3$ is affected by the current direction.