Spin blocker made of semiconductor double quantum well using the Rashba effect
We propose a lateral spin-blockade device that uses an InGaAs/InAlAs double quantum well (DQW), where the values of the Rashba spin-orbit parameter are opposite in sign but equal in magnitude between the constituent quantum wells (QW). By tuning the channel length of DQW and the magnitude of the externally applied in-plane magnetic field, one can block the transmission of one spin (e.g., spin-down) component, leading to a spin-polarized current. Such a spin-blocking effect, brought about by wave vector matching of the spin-split Fermi surfaces between the two QWs, paves the way for a new scheme of spin-polarized electric current generation for future spintronics applications based on semiconductor band engineering.