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M. Eto

M. Eto contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.other

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preprint2013arXiv

Spin blocker made of semiconductor double quantum well using the Rashba effect

We propose a lateral spin-blockade device that uses an InGaAs/InAlAs double quantum well (DQW), where the values of the Rashba spin-orbit parameter $α_{\rm R}$ are opposite in sign but equal in magnitude between the constituent quantum wells (QW). By tuning the channel length of DQW and the magnitude of the externally applied in-plane magnetic field, one can block the transmission of one spin (e.g., spin-down) component, leading to a spin-polarized current. Such a spin-blocking effect, brought about by wave vector matching of the spin-split Fermi surfaces between the two QWs, paves the way for a new scheme of spin-polarized electric current generation for future spintronics applications based on semiconductor band engineering.

preprint2010arXiv

Phonon Spectroscopy by Electric Measurements of Coupled Quantum Dots

We propose phonon spectroscopy by electric measurements of the low-temperature conductance of coupled-quantum dots, specifically employing dephasing of the quantum electronic transport by the phonons. The setup we consider consists of a T-shaped double-quantum-dot (DQD) system in which only one of the dots (dot 1) is connected to external leads and the other (dot 2) is coupled solely to the first one. For noninteracting electrons, the differential conductance of such a system vanishes at a voltage located in-between the energies of the bonding and the anti-bonding states, due to destructive interference. When electron-phonon (e-ph) on the DQD is invoked, we find that, at low temperatures, phonon emission taking place on dot 1 does not affect the interference, while phonon emission from dot 2 suppresses it. The amount of this suppression, as a function of the bias voltage, follows the effective e-ph coupling reflecting the phonon density of states and can be used for phonon spectroscopy.

preprint2009arXiv

Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon

Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states $ α| \uparrow \downarrow >+β| \downarrow \uparrow >$ and $-β| \uparrow \downarrow > + α| \downarrow \uparrow >$ were formed between phosphorus electron and nuclear spins, and electron paramagnetic resonance transitions between these superposition states and $| \uparrow \uparrow >$ or $| \downarrow \downarrow >$ states are observed clearly. A continuous change of $α$ and $β$ with the magnetic field was observed with a behavior fully consistent with theory of phosphorus donors in silicon.