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A. Raymond

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Published work

5 published item(s)

preprint2022arXiv

Measurement of the ${}^{136}$Xe two-neutrino double beta decay half-life via direct background subtraction in NEXT

We report a measurement of the half-life of the ${}^{136}$Xe two-neutrino double beta decay performed with a novel direct background subtraction technique. The analysis relies on the data collected with the NEXT-White detector operated with ${}^{136}$Xe-enriched and ${}^{136}$Xe-depleted xenon, as well as on the topology of double-electron tracks. With a fiducial mass of only 3.5 kg of Xe, a half-life of $2.34^{+0.80}_{-0.46}\textrm{(stat)}^{+0.30}_{-0.17}\textrm{(sys)}\times10^{21}~\textrm{yr}$ is derived from the background-subtracted energy spectrum. The presented technique demonstrates the feasibility of unique background-model-independent neutrinoless double beta decay searches.

preprint2022arXiv

On-chip generation of hybrid polarization-frequency entangled biphoton states

We demonstrate a chip-integrated semiconductor source that combines polarization and frequency entanglement, allowing the generation of entangled biphoton states in a hybrid degree of freedom without postmanipulation. Our AlGaAs device is based on type-II spontaneous parametric down-conversion (SPDC) in a counterpropagating phase-matching scheme, in which the modal birefringence lifts the degeneracy between the two possible nonlinear interactions. This allows the direct generation of polarization-frequency entangled photons, at room temperature and telecom wavelength, and in two distinct spatial modes, offering enhanced flexibility for quantum information protocols. The state entanglement is quantified by a combined measurement of the joint spectrum and Hong-ou-Mandel interference of the biphotons, allowing to reconstruct a restricted density matrix in the hybrid polarization-frequency space.

preprint2020arXiv

Engineering two-photon wavefunction and exchange statistics in a semiconductor chip

High-dimensional entangled states of light provide novel possibilities for quantum information, from fundamental tests of quantum mechanics to enhanced computation and communication protocols. In this context, the frequency degree of freedom combines the assets of robustness to propagation and easy handling with standard telecommunication components. Here we use an integrated semiconductor chip to engineer the wavefunction and exchange statistics of frequency-entangled photon pairs directly at the generation stage, without post-manipulation. Tuning the spatial properties of the pump beam allows to generate frequency-anticorrelated, correlated and separable states, and to control the symmetry of the spectral wavefunction to induce either bosonic or fermionic behaviors. These results, supported by analytical and numerical calculations, open promising perspectives for the quantum simulation of fermionic problems with photons on an integrated platform, as well as for communication and computation protocols exploiting antisymmetric high-dimensional quantum states.

preprint2015arXiv

Conduction electrons localized by charged magneto-acceptors A$^{2-}$ in GaAs/GaAlAs quantum wells

A variational theory is presented of A$^{1-}$ and A$^{2-}$ centers, i.e. of a negative acceptor ion localizing one and two conduction electrons, respectively, in a GaAs/GaAlAs quantum well in the presence of a magnetic field parallel to the growth direction. A combined effect of the well and magnetic field confines conduction electrons to the proximity of the ion, resulting in discrete repulsive energies above the corresponding Landau levels. The theory is motivated by our experimental magneto-transport results which indicate that, in a heterostructure doped in the GaAs well with Be acceptors, one observes a boil-off effect in which the conduction electrons in the crossed-field configuration are pushed by the Hall electric field from the delocalized Landau states to the localized acceptor states and cease to conduct. A detailed analysis of the transport data shows that, at high magnetic fields, there are almost no conducting electrons left in the sample. It is concluded that one negative acceptor ion localizes up to four conduction electrons.

preprint2013arXiv

Reservoir model for two-dimensional electron gases in quantizing magnetic fields: a review

We collect and review works which treat two-dimensional electron gases in quantum wells (mostly GaAs/GaAlAs heterostructures) in the presence of quantizing magnetic fields as open systems in contact with outside reservoirs. If a reservoir is sufficiently large, it pins the Fermi level to a certain energy. As a result, in a varying external magnetic field, the thermodynamic equilibrium will force oscillations of the electron density in and out of the quantum well (QW). This leads to a number of physical phenomena in magneto-transport, interband and intraband magneto-optics, magnetization, magneto-plasma dispersion, etc. In particular, as first proposed by Baraff and Tsui, the density oscillations in and out of QW lead to plateaus in the Integer Quantum Hall Effect (IQHE) at values observed in experiments. The gathered evidence, especially from magneto-optical investigations, allows us to conclude that, indeed, in most GaAs/GaAlAs hetrostructures one deals with open systems in which the electron density in QWs oscillates as the magnetic field varies. Relation of the density oscillations to other factors, such as electron localization, and their combined influence on the quantum transport in 2D electron gases, is discussed. In particular, a validity of the classical formula for the Hall resistivity ρxy = B/Nec is considered. It is concluded that the density oscillations are not sufficient to be regarded as the only source of plateaus in IQHE, although such claims have been sometimes made in the past and present. Still, our general conclusion is that the reservoir approach should be included in various descriptions of 2D electron gases in the present of a magnetic field. An attempt has been made to quote all the relevant literature on the subject.