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Researcher profile

A. Rai

A. Rai contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

4 published item(s)

preprint2014arXiv

Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot

We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the MCF is sensitive to the disorder potential created by remote ionised impurities. We utilize this to study the temporal/thermal stability of Si acceptors in p-type AlGaAs/GaAs heterostructures. In particular, we use a surface gate to cause charge migration between Si acceptor sites at T = 40 mK, and detect the ensuing changes in the disorder potential using the MCF. We show that Si acceptors are metastable at T = 40 mK and that raising the device to a temperature T = 4.2 K and returning to T = 40 mK is sufficient to produce complete decorrelation of the MCF. The same decorrelation occurs at T ~ 165 K for electron quantum dots; by comparing with the known trap energy for Si DX centers, we estimate that the shallow acceptor traps in our heterostructures have an activation energy EA ~ 3 meV. Our method can be used to study charge noise and dopant stability towards optimisation of semiconductor materials and devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Experimental simulation of charge conservation violation and Majorana dynamics

Unphysical particles are commonly ruled out from the solution of physical equations, as they fundamentally cannot exist in any real system and, hence, cannot be examined experimentally in a direct fashion. One of the most celebrated equations that allows unphysical solutions is the relativistic Majorana equation\cite{Majorana} which might describe neutrinos and other exotic particles beyond the Standard Model. The equation's physical solutions, the Majorana fermions, are predicted to be their own anti-particles and as a consequence they have to be neutrally charged; the charged version however (called Majoranon) is, due to charge non-conservation, unphysical and cannot exist. On the other hand, charge conservation violation has been contemplated in alternative theories associated with higher spacetime dimensions or a non-vanishing photon mass; theories whose exotic nature makes experimental testing with current technology an impossible task. In our work, we present an experimental scheme based on optics with which we simulate the dynamics of a Majoranon, involving the implementation of unphysical charge conjugation and complex conjugation. We show that the internal dynamics of the Majoranon is fundamentally different from that of its close cousin, the Dirac particle, to illustrate the nature of the unphysical operations. For this we exploit the fact that in quantum mechanics the wave function itself is not a measurable quantity. Therefore, wave functions of real physical particles, in our case Dirac particles with opposite masses, can be superposed to a wave function of an unphysical particle, the Majoranon. Our results open a new front in the field of quantum simulations of exotic phenomena, with possible applications in condensed matter physics, topological quantum computing, and testing theories within and beyond the Standard Model with existing technology.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements, we show that while (NH4)2Sx treatment gives a 40 - 60 x increase in photoluminescence intensity for the (100) surface, an increase of only 2 - 3 x is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent `leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer. Our results provide insights into the physics of Si acceptors in AlGaAs/GaAs heterostructures, including widely-debated acceptor complexes such as Si-X. We propose methods for mitigating the gate hysteresis, including poisoning the modulation-doping layer with deep-trapping centers (e.g., by co-doping with transition metal species), and replacing the Schottky gates with degenerately-doped semiconductor gates to screen the conducting channel from GaAs surface-states.

0 citations0 reviewsNo code linkedOpen access