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A. Persaud

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physics.acc-ph cond-mat.mtrl-sci physics.ins-det cond-mat cond-mat.mes-hall cond-mat.other quant-ph

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preprint2021arXiv

Beam power scale-up in MEMS based multi-beam ion accelerators

We report on the development of multi-beam RF linear ion accelerators that are formed from stacks of low cost wafers and describe the status of beam power scale-up using an array of 120 beams. The total argon ion current extracted from the 120-beamlet extraction column was 0.5 mA. The measured energy gain in each RF gap reached as high as 7.25 keV. We present a path of using this technology to achieve ion currents >1 mA and ion energies >100 keV for applications in materials processing.

preprint2016arXiv

Control Infrastructure for a Pulsed Ion Accelerator

We report on updates to the accelerator controls for the Neutralized Drift Compression Experiment II, a pulsed induction-type accelerator for heavy ions. The control infrastructure is built around a LabVIEW interface combined with an Apache Cassandra backend for data archiving. Recent upgrades added the storing and retrieving of device settings into the database, as well as ZeroMQ as a message broker that replaces LabVIEW's shared variables. Converting to ZeroMQ also allows easy access via other programming languages, such as Python.

preprint2016arXiv

Recent Experiments At Ndcx-II: Irradiation Of Materials Using Short, Intense Ion Beams

We present an overview of the performance of the Neutralized Drift Compression Experiment-II (NDCX-II) accelerator at Berkeley Lab, and summarize recent studies of material properties created with nanosecond and millimeter-scale ion beam pulses. The scientific topics being explored include the dynamics of ion induced damage in materials, materials synthesis far from equilibrium, warm dense matter and intense beam-plasma physics. We summarize the improved accelerator performance, diagnostics and results of beam-induced irradiation of thin samples of, e.g., tin and silicon. Bunches with over 3x10^10 ions, 1- mm radius, and 2-30 ns FWHM duration have been created. To achieve these short pulse durations and mm-scale focal spot radii, the 1.2 MeV He+ ion beam is neutralized in a drift compression section which removes the space charge defocusing effect during final compression and focusing. Quantitative comparison of detailed particle-in-cell simulations with the experiment play an important role in optimizing accelerator performance; these keep pace with the accelerator repetition rate of ~1/minute.

preprint2014arXiv

Accessing defect dynamics using intense, nanosecond pulsed ion beams

Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystal Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.

preprint2009arXiv

Critical issues in the formation of quantum computer test structures by ion implantation

The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent results in the characterization of spin dependent transport and single ion doping and then discuss the diffusion and segregation behaviour of phosphorus, antimony and bismuth ions from low fluence, low energy implantations as characterized through depth profiling by secondary ion mass spectrometry (SIMS). Both phosphorus and bismuth are found to segregate to the SiO2/Si interface during activation anneals, while antimony diffusion is found to be minimal. An effect of the ion charge state on the range of antimony ions, 121Sb25+, in SiO2/Si is also discussed.

preprint2008arXiv

Mapping of ion beam induced current changes in FinFETs

We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.

preprint2002arXiv

Single Ion Implantation for Solid State Quantum Computer Development

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficieny. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10keV), single ion implantation scheme for 31P(q+) ions. When 31P(q+) ions impinge on a wafer surface, their potential energy (9.3 keV for P15+) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.