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Researcher profile

A. Ouerghi

A. Ouerghi contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conquant-ph

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Published work

3 published item(s)

preprint2022arXiv

Flat band and Lifschitz transition in long-range ordered supergraphene obtained by Erbium intercalation

Dispersionless energy bands are a peculiar property gathering increasing attention for the emergence of novel photonic, magnetic and electronic properties. Here we report the first observation of a graphene superstructure n-doped up to the Lifshitz transition and exhibiting a flat band, obtained by ordered Erbium intercalation between a single layer graphene and SiC(0001). STM experiments reveal large graphene areas characterized by a long-range ordered hexagonal superstructure with a lattice parameter of 1.40 nm, rotated by 19 degrees with respect to the original lattice. Angle Resolved Photoelectron Spectroscopy measurements show that this graphene structure exhibits Dirac cones with perfect linear dispersion, and a Dirac point at -1.72 eV +/- 0.02 under the Fermi level, which is one of the highest doping levels ever obtained solely by intercalation. Fermi surface measurements show that the Lifshitz transition has been reached, and that a wide flat band is generated around the M point. We propose that this modification of the band structure is the effect of an induced spin-orbit coupling. This system provides a playground to study the interaction between a novel magnetic order mediated by pi-band states, and a divergent density of states at the Fermi level.

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preprint2020arXiv

Electronic heat flow and thermal shot noise in quantum circuits

When assembling individual quantum components into a mesoscopic circuit, the interplay between Coulomb interaction and charge granularity breaks down the classical laws of electrical impedance composition. Here we explore experimentally the thermal consequences, and observe an additional quantum mechanism of electronic heat transport. The investigated, broadly tunable test-bed circuit is composed of a micron-scale metallic node connected to one electronic channel and a resistance. Heating up the node with Joule dissipation, we separately determine, from complementary noise measurements, both its temperature and the thermal shot noise induced by the temperature difference across the channel (`delta-$T$ noise'). The thermal shot noise predictions are thereby directly validated, and the electronic heat flow is revealed. The latter exhibits a contribution from the channel involving the electrons' partitioning together with the Coulomb interaction. Expanding heat current predictions to include the thermal shot noise, we find a quantitative agreement with experiments.

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preprint2012arXiv

Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption

In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 μ\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around $ν= 2$, an evidence of monolayer graphene. We find low electron concentration of $9\times 10^{11} \textrm{cm}^{-2}$ and we show that a doping of $10^{13}\textrm{cm}^{-2}$ which is characteristic of intrinsic epitaxial graphene can be restored by vacuum annealing. The effect of oxygen adsorption on carrier density is confirmed by local angle-resolved photoemission spectroscopy measurements. These results are important for understanding oxygen adsorption on epitaxial graphene and for its application to metrology and mesoscopic physics where a low carrier concentration is required.

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