BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

A. Ouerghi

A. Ouerghi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.str-elquant-phcond-mat.mtrl-scicond-mat.supr-conphysics.chem-phphysics.ins-det

Catalog footprint

What is connected

9works
7topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

9 published item(s)

preprint2022arXiv

Flat band and Lifschitz transition in long-range ordered supergraphene obtained by Erbium intercalation

Dispersionless energy bands are a peculiar property gathering increasing attention for the emergence of novel photonic, magnetic and electronic properties. Here we report the first observation of a graphene superstructure n-doped up to the Lifshitz transition and exhibiting a flat band, obtained by ordered Erbium intercalation between a single layer graphene and SiC(0001). STM experiments reveal large graphene areas characterized by a long-range ordered hexagonal superstructure with a lattice parameter of 1.40 nm, rotated by 19 degrees with respect to the original lattice. Angle Resolved Photoelectron Spectroscopy measurements show that this graphene structure exhibits Dirac cones with perfect linear dispersion, and a Dirac point at -1.72 eV +/- 0.02 under the Fermi level, which is one of the highest doping levels ever obtained solely by intercalation. Fermi surface measurements show that the Lifshitz transition has been reached, and that a wide flat band is generated around the M point. We propose that this modification of the band structure is the effect of an induced spin-orbit coupling. This system provides a playground to study the interaction between a novel magnetic order mediated by pi-band states, and a divergent density of states at the Fermi level.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic heat flow and thermal shot noise in quantum circuits

When assembling individual quantum components into a mesoscopic circuit, the interplay between Coulomb interaction and charge granularity breaks down the classical laws of electrical impedance composition. Here we explore experimentally the thermal consequences, and observe an additional quantum mechanism of electronic heat transport. The investigated, broadly tunable test-bed circuit is composed of a micron-scale metallic node connected to one electronic channel and a resistance. Heating up the node with Joule dissipation, we separately determine, from complementary noise measurements, both its temperature and the thermal shot noise induced by the temperature difference across the channel (`delta-$T$ noise'). The thermal shot noise predictions are thereby directly validated, and the electronic heat flow is revealed. The latter exhibits a contribution from the channel involving the electrons' partitioning together with the Coulomb interaction. Expanding heat current predictions to include the thermal shot noise, we find a quantitative agreement with experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Controlling charge quantization with quantum fluctuations

In 1909, Millikan showed that the charge of electrically isolated systems is quantized in units of the elementary electron charge e. Today, the persistence of charge quantization in small, weakly connected conductors allows for circuits where single electrons are manipulated, with applications in e.g. metrology, detectors and thermometry. However, quantum fluctuations progressively reduce the discreteness of charge as the connection strength is increased. Here we report on the full quantum control and characterization of charge quantization. By using semiconductor-based tunable elemental conduction channels to connect a micrometer-scale metallic island, the complete evolution is explored while scanning the entire range of connection strengths, from tunnel barrier to ballistic contact. We observe a robust scaling of charge quantization as the square root of the residual electron reflection probability across a quantum channel when approaching the ballistic critical point, which also applies beyond the regimes yet accessible to theory. At increased temperatures, the thermal fluctuations result in an exponential suppression of charge quantization as well as in a universal square root scaling, for arbitrary connection strengths, in agreement with expectations. Besides direct applications to improve single-electron functionalities and for the metal-semiconductor hybrids emerging in the quest toward topological quantum computing, the knowledge of the quantum laws of electricity will be essential for the quantum engineering of future nanoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electron phase shift at the zero-bias anomaly of quantum point contacts

The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the zero-bias anomaly in quantum point contacts where interactions drive a spontaneous charge localization. However, the Kondo origin of this anomaly remains under debate, and additional experimental evidence is necessary. Here we report on the first phase-sensitive measurement of the zero-bias anomaly in quantum point contacts using a scanning gate microscope to create an electronic interferometer. We observe an abrupt shift of the interference fringes by half a period in the bias range of the zero-bias anomaly, a behavior which cannot be reproduced by single-particle models. We instead relate it to the phase shift experienced by electrons scattering off a Kondo system. Our experiment therefore provides new evidence of this many-body effect in quantum point contacts.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Primary thermometry triad at 6 mK in mesoscopic circuits

Quantum physics emerge and develop as temperature is reduced. Although mesoscopic electrical circuits constitute an outstanding platform to explore quantum behavior, the challenge in cooling the electrons impedes their potential. The strong coupling of such micrometer-scale devices with the measurement lines, combined with the weak coupling to the substrate, makes them extremely difficult to thermalize below 10 mK and imposes in-situ thermometers. Here we demonstrate electronic quantum transport at 6 mK in micrometer-scale mesoscopic circuits. The thermometry methods are established by the comparison of three in-situ primary thermometers, each involving a different underlying physics. The employed combination of quantum shot noise, quantum back-action of a resistive circuit and conductance oscillations of a single-electron transistor covers a remarkably broad spectrum of mesoscopic phenomena. The experiment, performed in vacuum using a standard cryogen-free dilution refrigerator, paves the way toward the sub-millikelvin range with additional thermalization and refrigeration techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases from 3 000 cm^2/Vs to > 11 000 cm^2/Vs at 0.3 K. Additionally, graphene electron concentration tends to decrease from a few 10^12 cm^-2 to less than 10^12 cm^-2. For a typical large (30x280 um^2) Hall bar, we report the observation of the integer quantum Hall states at 0.3 K with well developed transversal resistance plateaus at Landau level fillings factors of nu = 2, 6, 10, 14.. 42 and Shubnikov de Haas oscillation of the longitudinal resistivity observed from about 1 T. In such a device, the Hall state quantization at nu=2, at 19 T and 0.3 K, can be very robust: the dissipation in electronic transport can stay very low, with the longitudinal resistivity lower than 5 mOhm, for measurement currents as high as 250 uA. This is very promising in the view of an application in metrology.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy

Quantum point contacts exhibit mysterious conductance anomalies in addition to well known conductance plateaus at multiples of 2e^2/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point contact. While sweeping the tip distance, we observe repetitive splittings of the zero-bias anomaly, correlated with simultaneous appearances of the 0.7 anomaly. We interpret this behaviour in terms of alternating equilibrium and non-equilibrium Kondo screenings of different spin states localized in the channel. These alternating Kondo effects point towards the presence of a Wigner crystal containing several charges with different parities. Indeed, simulations show that the electron density in the channel is low enough to reach one-dimensional Wigner crystallization over a size controlled by the tip position.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of Oxygen Adsorption on the Local Properties of Epitaxial Graphene on SiC (0001)

The effect of oxygen adsorption on the local structure and electronic properties of monolayer graphene grown on SiC(0001) has been studied by means of Low Energy Electron Microscopy (LEEM), microprobe Low Energy Electron Diffraction (\muLEED) and microprobe Angle Resolved Photoemission (\muARPES). We show that the buffer layer of epitaxial graphene on SiC(0001) is partially decoupled after oxidation. The monitoring of the oxidation process demonstrates that the oxygen saturates the Si dangling bonds, breaks some Si-C bonds at the interface and intercalates the graphene layer. Accurate control over the oxidation parameters enables us to tune the charge density modulation in the layer.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption

In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 μ\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around $ν= 2$, an evidence of monolayer graphene. We find low electron concentration of $9\times 10^{11} \textrm{cm}^{-2}$ and we show that a doping of $10^{13}\textrm{cm}^{-2}$ which is characteristic of intrinsic epitaxial graphene can be restored by vacuum annealing. The effect of oxygen adsorption on carrier density is confirmed by local angle-resolved photoemission spectroscopy measurements. These results are important for understanding oxygen adsorption on epitaxial graphene and for its application to metrology and mesoscopic physics where a low carrier concentration is required.

0 citations0 reviewsNo code linkedOpen access