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A. N. Caruso

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3 publications

preprint2015arXiv

Gapped Surface States in a Strong-Topological-Semimetal

A three-dimensional strong-topological-insulator or -semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur away from time-reversal-invariant momenta. The mirror-invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi4_4Se3_3. Angle-resolved photoemission spectroscopy and \textit{ab initio} calculations reveal partial gapping of surface bands on the Bi2_2Se3_3-termination of Bi4_4Se3_3(111), where an 85 meV gap along ΓˉKˉ\barΓ\bar{K} closes to zero toward the mirror-invariant ΓˉMˉ\barΓ\bar{M} azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin-helicity.

preprint2014arXiv

Absence of a Proximity Effect in a Topological Insulator on a Cuprate Superconductor: Bi2Se3/Bi2Sr2CaCu2O8

Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attractive alternative to considerably relax these constraints, but it is not clear whether the proximity effect would be effective in heterostructures involving cuprates and topological insulators. Here, we present angle-resolved photoemission studies of thin Bi2Se3 films grown in-situ on optimally doped Bi2Sr2CaCu2O8 substrates that show the absence of proximity-induced gaps on the surfaces of Bi2Se3 films as thin as a 1.5 quintuple layer. These results suggest that the superconducting proximity effect between a cuprate superconductor and a topological insulator is strongly suppressed, likely due to a very short coherence length along the c-axis, incompatible crystal and pairing symmetries at the interface, small size of the topological surface state Fermi surface and adverse effects of a strong spin-orbit coupling in the topological material.

preprint2013arXiv

Topological insulator in a Bi-Bi2_2Se3_3 infinitely adaptive superlattice phase

We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and Bi2_2Se3_3. The compound, based on Bi4_4Se3_3, is a 1:1 natural superlattice of alternating Bi2_2 layers and Bi2_2Se3_3 layers; the inclusion of S allows the growth of large crystals, with the formula Bi4_4Se2.6_{2.6}S0.4_{0.4}. The crystals cleave along the interfaces between the Bi2_2 and Bi2_2Se3_3 layers, with the surfaces obtained having alternating Bi or Se termination. The resulting terraces, observed by photoemission electron microscopy, create avenues suitable for the study of one-dimensional topological physics. The electronic structure, determined by spin- and angle- resolved photoemission spectroscopy, shows the existence of a surface state that forms a large, hexagonally shaped Fermi surface around the ΓΓ point of the surface Brillouin zone, with the spin structure indicating that this material is a topological insulator.

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