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Researcher profile

A. Moewes

A. Moewes contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.supr-concond-mat.mtrl-scicond-mat.other

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Published work

4 published item(s)

preprint2012arXiv

Effect of 3d-doping on the electronic structure of BaFe2As2

The electronic structure of BaFe2As2 doped with Co, Ni, and Cu has been studied by a variety of experimental and theoretical methods, but a clear picture of the dopant 3d states has not yet emerged. Herein we provide experimental evidence of the distribution of Co, Ni, and Cu 3d states in the valence band. We conclude that the Co and Ni 3d states provide additional free carriers to the Fermi level, while the Cu 3d states are found at the bottom of the valence band in a localized 3d10 shell. These findings help shed light on why superconductivity can occur in BaFe2As2 doped with Co and Ni but not Cu.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Experimental Evidence of Cage Conduction Bands in Superconducting Cement 12CaO$\cdot$7Al$_2$O$_3$

Natural 12CaO$\cdot$7Al$_2$O$_3$ (C12A7) is a wide bandgap insulator, but conductivity can be realized by introducing oxygen deficiency. Currently, there are two competing models explaining conductivity in oxygen-deficient C12A7, one involving the electron transfer via a "cage conduction band" inside the nominal band gap, the other involving electron hopping along framework lattice sites. To help resolve this debate, we probe insulating and conducting C12A7 with X-ray emission, X-ray absorption, and X-ray photoemission spectroscopy, which provide a full picture of both the valence and conduction band edges in these materials. These measurements suggest the existence of a narrow conduction band between the main conduction and valence bands common in both conducting and insulating C12A7 and support the theory that free electrons in oxygen-deficient C12A7 occupy the low-energy states of this narrow band. Our measurements are corroborated with density functional theory calculations.

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preprint2010arXiv

Correlation effects in Ni 3d states of LaNiPO

The electronic structure of the new superconducting material LaNiPO experimentally probed by soft X-ray spectroscopy and theoretically calculated by the combination of local density approximation with Dynamical Mean-Field Theory (LDA+DMFT) are compared herein. We have measured the Ni L2,3 X-ray emission (XES) and absorption (XAS) spectra which probe the occupied and unoccupied the Ni 3d states, respectively. In LaNiPO, the Ni 3d states are strongly renormalized by dynamical correlations and shifted about 1.5 eV lower in the valence band than the corresponding Fe 3d states in LaFeAsO. We further obtain a lower Hubbard band at -9 eV below the Fermi level in LaNiPO which bears striking resemblance to the lower Hubbard band in the correlated oxide NiO, while no such band is observed in LaFeAsO. These results are also supported by the intensity ratio between the transition metal L2 and L3 bands measured experimentally to be higher in LaNiPO than in LaFeAsO, indicating the presence of the stronger electron correlations in the Ni 3d states in LaNiPO in comparison with the Fe 3d states in LaFeAsO. These findings are in accordance with resonantly excited transition metal L3 X-ray emission spectra which probe occupied metal 3d-states and show the appearance of the lower Hubbard band in LaNiPO and NiO and its absence in LaFeAsO.

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preprint2010arXiv

Metal-insulator transition in NiS$_{2-x}$Se$_x$

The origin of the gap in NiS2 as well as the pressure- and doping-induced metal-insulator transition in the NiS2-xSex solid solutions are investigated both theoretically using the first-principles band structures combined with the dynamical mean-field approximation for the electronic correlations and experimentally by means of infrared and x-ray absorption spectroscopies. The bonding-antibonding splitting in the S-S (Se-Se) dimer is identified as the main parameter controlling the size of the charge gap. The implications for the metal-insulator transition driven by pressure and Se doping are discussed.

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