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Researcher profile

A. M. Bratkovsky

A. M. Bratkovsky contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2011arXiv

Semiconducting graphene nanomeshes

Symmetry arguments are used to describe all possible two-dimensional periodic corrugations of graphene ("nanomeshes") capable of inducing tangible semiconducting gap. Such nanomeshes or superlattices break the initial graphene translational symmetry in a way that produces mixing and subsequent splitting of the Dirac K and K' states. All of them have hexagonal Bravais lattice and are described by space groups that are subgroups of the graphene group. The first-principles calculations show that the gaps of about 0.5 eV can be induced at strains safely smaller than the graphene failure strain.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Negative c-axis magnetoresistance in graphite

We have studied the c-axis interlayer magnetoresistance (ILMR), R_c(B) in graphite. The measurements have been performed on strongly anisotropic highly oriented pyrolytic graphite (HOPG) samples in magnetic field up to B = 9 T applied both parallel and perpendicular to the sample c-axis in the temperature interval 2 K < T < 300 K. We have observed negative magnetoresistance, dR_c/dB < 0, for B || c-axis above a certain field B_m(T) that reaches its minimum value B_m = 5.4 T at T = 150 K. The results can be consistently understood assuming that ILMR is related to a tunneling between zero-energy Landau levels of quasi-two-dimensional Dirac fermions, in a close analogy with the behavior reported for alpha-(BEDT-TTF)2I3 [N. Tajima et al., Phys. Rev. Lett. 102, 176403 (2009)], another multilayer Dirac electron system.

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preprint2009arXiv

Polaronic memristor strongly coupled to electrodes

Attractive electron correlations due to an electron-vibron interaction (EVI) can overcome the direct Coulomb repulsion of polarons in strongly deformable molecular quantum dots (MQDs). If it realizes, a switching appears in the I-V characteristics of the degenerate nonadiabatic molecular bridges weakly coupled to electrodes providing a route to ultrafast `memristors&#39; (memory-resistors) as the basis for future oscillators, amplifers, and other important circuit elements. Here, we extend our theory of polaronic memristors to adiabatic MQDs strongly coupled to the leads and show that the degeneracy of MQD (or other multilevel energy structure) along with the polaron-polaron attraction is a necessary ingredient of its switching behavior in the strong-coupling regime as well.

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preprint2009arXiv

Polarons in 2+epsilon dimensions and giant figure of merit of semiconducting nanolayers

Polarons - electrons coupled with lattice vibrations - play a key role in the transport and optical properties of many systems of reduced dimension and dimensionality. Their confinement affects drastically the phonon, polaron, bipolaron and multi-polaron properties of quantum wells. Here we calculate the energy spectrum and thermopower of polarons confined to a potential well as a function of the well thickness. We show that the polaron mass enhancement in 2+epsilon dimensions explains a giant thermolectric power recently observed in doped semiconducting nanolayers (multiple quantum wells (MQWs)), and propose a route for enhancing the performance of thermoelectric energy nanoconverters increasing their figure of merit by more than one order of magnitude.

0 citations0 reviewsNo code linkedOpen access