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A. Kis

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Published work

3 published item(s)

preprint2019arXiv

Strongly coupled coherent phonons in single-layer MoS$_2$

We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), where the confined dynamical interaction between excitons and phonons is unexplored. The coherent oscillatory motion of the out-of-plane $A'_{1}$ phonons, triggered by the ultrashort laser pulses, dynamically modulates the excitonic resonances on a timescale of few tens fs. We observe an enhancement by almost two orders of magnitude of the CP amplitude when detected in resonance with the C exciton peak, combined with a resonant enhancement of CP generation efficiency. Ab initio calculations of the change in 1L-MoS$_2$ band structure induced by the $A'_{1}$ phonon displacement confirm a strong coupling with the C exciton. The resonant behavior of the CP amplitude follows the same spectral profile of the calculated Raman susceptibility tensor. This demonstrates that CP excitation in 1L-MoS$_2$ can be described as a Raman-like scattering process. These results explain the CP generation process in 1L-TMDs, paving the way for coherent all-optical control of excitons in layered materials in the THz frequency range.

preprint2016arXiv

Magneto-excitons in large area CVD grown monolayer MoS$_{2}$ and MoSe$_{2}$ on sapphire

Magneto transmission spectroscopy was employed to study the valley Zeeman effect in large-area monolayer MoS$_{2}$ and MoSe$_{2}$. The extracted values of the valley g-factors for both A- and B-exciton were found be similar with $g_v \simeq -4.5$. The samples are expected to be strained due to the CVD growth on sapphire at high temperature ($700^\circ$C). However, the estimated strain, which is maximum at low temperature, is only $\simeq 0.2\%$. Theoretical considerations suggest that the strain is too small to significantly influence the electronic properties. This is confirmed by the measured value of valley g-factor, and the measured temperature dependence of the band gap, which are almost identical for CVD and mechanically exfoliated MoS$_2$.

preprint2010arXiv

Visibility of dichalcogenide nanolayers

Dichalcogenides with the common formula MX2 are layered materials with electrical properties that range from semiconducting to superconducting. Here, we describe optimal imaging conditions for optical detection of ultrathin, two-dimensional dichalcogenide nanocrystals containing single, double and triple layers of MoS2, WSe2 and NbSe2. A simple optical model is used to calculate the contrast for nanolayers deposited on wafers with varying thickness of SiO2. The model is extended for imaging using the green channel of a video camera. Using AFM and optical imaging we confirm that single layers of MoS2, WSe2 and NbSe2 can be detected on 90nm and 270 nm SiO2 using optical means. By measuring contrast under broad-band green illumination we are also able to distinguish between nanostructures containing single, mono and triple layers of MoS2, WSe2 and NbSe2.