Researcher profile

A. K. Rumaiz

A. K. Rumaiz contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - Baseline
2works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2015arXiv

A loss for photoemission is a gain for Auger: Direct experimental evidence of crystal-field splitting and charge transfer in photoelectron spectroscopy

We find a new 5 eV satellite in the Ti 1s photoelectron spectrum of the transition-metal oxide SrTiO$_3$. This satellite appears in addition to the well-studied 13 eV structure that is typically associated with the Ti 2p core line. We give direct experimental evidence that the presence of two satellites is due to the crystal-field splitting of the metal 3d orbitals. They originate from ligand 2p t$_{2g}$ $\rightarrow$ metal 3d t$_{2g}$ and ligand 2p e$_g$ $\rightarrow$ metal 3d e$_g$ monopole charge-transfer excitations within the sudden approximation of quantum mechanics. This assignment is made by the energetics of the resonant and high-energy threshold behaviors of the Ti K-L$_2$L$_3$ Auger decay that follows Ti 1s photo-ionization.

preprint2015arXiv

Stoichiometry Dependence of Potential Screening at La$_{(1-δ)}$Al$_{(1+δ)}$O$_3$/SrTiO$_3$ Interfaces

Hard x-ray photoelectron spectroscopy (HAXPES) and variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) analyses have been performed on 10 unit cell La$_{(1-δ)}$Al$_{(1+δ)}$O$_3$ films, with La:Al ratios of 1.1, 1.0, and 0.9, deposited on SrTiO$_3$. Of the three films, only the Al-rich film was known to have a conductive interface. VKE-XPS, coupled with maximum entropy analysis, shows significant differences in the compositional depth profile between the Al-rich, the La-rich, and stoichiometric films; significant La enrichment at the interface is observed in the La-rich and stoichiometric films, while the Al-rich shows little to no intermixing. Additionally, the La-rich and stoichiometric films show a high concentration of Al at the surface, which is not observed in the Al-rich film. HAXPES valence band (VB) analysis shows a broadening of the VB for the Al-rich sample relative to the stoichiometric and La-rich samples, which have insulating interfaces. This broadening is consistent with an electric field across the Al-rich film. These results are consistent with a defect driven electronic reconstruction.