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A. K. Rumaiz

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cond-mat.mtrl-sci

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preprint2015arXiv

A loss for photoemission is a gain for Auger: Direct experimental evidence of crystal-field splitting and charge transfer in photoelectron spectroscopy

We find a new 5 eV satellite in the Ti 1s photoelectron spectrum of the transition-metal oxide SrTiO $_3$ . This satellite appears in addition to the well-studied 13 eV structure that is typically associated with the Ti 2p core line. We give direct experimental evidence that the presence of two satellites is due to the crystal-field splitting of the metal 3d orbitals. They originate from ligand 2p t $_{2g}$ $\rightarrow$ metal 3d t $_{2g}$ and ligand 2p e $_g$ $\rightarrow$ metal 3d e $_g$ monopole charge-transfer excitations within the sudden approximation of quantum mechanics. This assignment is made by the energetics of the resonant and high-energy threshold behaviors of the Ti K-L $_2$ L $_3$ Auger decay that follows Ti 1s photo-ionization.

preprint2015arXiv

Stoichiometry Dependence of Potential Screening at La $_{(1-δ)}$ Al $_{(1+δ)}$ O $_3$ /SrTiO $_3$ Interfaces

Hard x-ray photoelectron spectroscopy (HAXPES) and variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) analyses have been performed on 10 unit cell La $_{(1-δ)}$ Al $_{(1+δ)}$ O $_3$ films, with La:Al ratios of 1.1, 1.0, and 0.9, deposited on SrTiO $_3$ . Of the three films, only the Al-rich film was known to have a conductive interface. VKE-XPS, coupled with maximum entropy analysis, shows significant differences in the compositional depth profile between the Al-rich, the La-rich, and stoichiometric films; significant La enrichment at the interface is observed in the La-rich and stoichiometric films, while the Al-rich shows little to no intermixing. Additionally, the La-rich and stoichiometric films show a high concentration of Al at the surface, which is not observed in the Al-rich film. HAXPES valence band (VB) analysis shows a broadening of the VB for the Al-rich sample relative to the stoichiometric and La-rich samples, which have insulating interfaces. This broadening is consistent with an electric field across the Al-rich film. These results are consistent with a defect driven electronic reconstruction.

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A. K. Rumaiz

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2 publications

A loss for photoemission is a gain for Auger: Direct experimental evidence of crystal-field splitting and charge transfer in photoelectron spectroscopy

Stoichiometry Dependence of Potential Screening at La $_{(1-δ)}$ Al $_{(1+δ)}$ O $_3$ /SrTiO $_3$ Interfaces

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A. K. Rumaiz

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2 publications

A loss for photoemission is a gain for Auger: Direct experimental evidence of crystal-field splitting and charge transfer in photoelectron spectroscopy

Stoichiometry Dependence of Potential Screening at La(1−δ)_{(1-δ)}(1−δ)​Al(1+δ)_{(1+δ)}(1+δ)​O3_33​/SrTiO3_33​ Interfaces

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Stoichiometry Dependence of Potential Screening at La $_{(1-δ)}$ Al $_{(1+δ)}$ O $_3$ /SrTiO $_3$ Interfaces