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A. J. Sigillito

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5 publications

preprint2019arXiv

Coherent transfer of quantum information in silicon using resonant SWAP gates

Solid state quantum processors based on spins in silicon quantum dots are emerging as a powerful platform for quantum information processing. High fidelity single- and two-qubit gates have recently been demonstrated and large extendable qubit arrays are now routinely fabricated. However, two-qubit gates are mediated through nearest-neighbor exchange interactions, which require direct wavefunction overlap. This limits the overall connectivity of these devices and is a major hurdle to realizing error correction, quantum random access memory, and multi-qubit quantum algorithms. To extend the connectivity, qubits can be shuttled around a device using quantum SWAP gates, but phase coherent SWAPs have not yet been realized in silicon devices. Here, we demonstrate a new single-step resonant SWAP gate. We first use the gate to efficiently initialize and readout our double quantum dot. We then show that the gate can move spin eigenstates in 100 ns with average fidelity FˉSWAPp\bar{F}_{SWAP}^p = 98%. Finally, the transfer of arbitrary two-qubit product states is benchmarked using state tomography and Clifford randomized benchmarking, yielding an average fidelity of FˉSWAPc\bar{F}_{SWAP}^c = 84% for gate operation times of ~300 ns. Through coherent spin transport, our resonant SWAP gate enables the coupling of non-adjacent qubits, thus paving the way to large scale experiments using silicon spin qubits.

preprint2016arXiv

Addressing spin transitions on 209Bi donors in silicon using circularly-polarized microwaves

Over the past decade donor spin qubits in isotopically enriched 28^{28}Si have been intensely studied due to their exceptionally long coherence times. More recently bismuth donor electron spins have become popular because Bi has a large nuclear spin which gives rise to clock transitions (first-order insensitive to magnetic field noise). At every clock transition there are two nearly degenerate transitions between four distinct states which can be used as a pair of qubits. Here it is experimentally demonstrated that these transitions are excited by microwaves of opposite helicity such that they can be selectively driven by varying microwave polarization. This work uses a combination of a superconducting coplanar waveguide (CPW) microresonator and a dielectric resonator to flexibly generate arbitrary elliptical polarizations while retaining the high sensitivity of the CPW.

preprint2016arXiv

Large Stark tuning of donor electron spin quantum bits in germanium

Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult to selectively manipulate single donor electron spins. Here, we show that by replacing the prevailing semiconductor host material (silicon) with germanium, donor electron spin qubits can be electrically tuned by more than an ensemble linewidth, making them compatible with gate addressable quantum computing architectures. Using X-band pulsed electron spin resonance, we measured the Stark effect for donor electron spins in germanium. We resolved both spin-orbit and hyperfine Stark shifts and found that at 0.4 T, the spin-orbit Stark shift dominates. The spin-orbit Stark shift is highly anisotropic, depending on the electric field orientation relative to the crystal axes and external magnetic field. When the Stark shift is maximized, the spin-orbit Stark parameter is four orders of magnitude larger than in silicon. At select orientations a hyperfine Stark effect was also resolved and is an order of magnitude larger than in silicon. We report the Stark parameters for 75^{75}As and 31^{31}P donor electrons and compare them to the available theory. Our data reveal that 31^{31}P donors in germanium can be tuned by at least four times the ensemble linewidth making germanium an appealing new host material for spin qubits that offers major advantages over silicon.

preprint2015arXiv

Anisotropic Stark Effect and Electric-Field Noise Suppression for Phosphorus Donor Qubits in Silicon

We report the use of novel, capacitively terminated coplanar waveguide (CPW) resonators to measure the quadratic Stark shift of phosphorus donor qubits in Si. We confirm that valley repopulation leads to an anisotropic spin-orbit Stark shift depending on electric and magnetic field orientations relative to the Si crystal. By measuring the linear Stark effect, we estimate the effective electric field due to strain in our samples. We show that in the presence of this strain, electric-field sources of decoherence can be non-negligible. Using our measured values for the Stark shift, we predict magnetic fields for which the spin-orbit Stark effect cancels the hyperfine Stark effect, suppressing decoherence from electric-field noise. We discuss the limitations of these noise-suppression points due to random distributions of strain and propose a method for overcoming them.

preprint2015arXiv

Electron spin coherence of shallow donors in natural and isotopically enriched germanium

Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times (T2T_{2}) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has non-magnetic isotopes so it is expected to support long T2T_{2}s while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wavefunction, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance (ESR) measurements of T2T_{2} and the spin-lattice relaxation (T1T_1) times for 75^{75}As and 31^{31}P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to 73^{73}Ge nuclear spins limits the coherence in samples with significant amounts of 73^{73}Ge. For the most highly enriched samples, we find that T1T_1 limits T2T_2 to T2=2T1T_2 = 2T_1. We report an anisotropy in T1T_1 and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited T2T_2 in samples with 73^{73}Ge.

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