Researcher profile

A. I. Toropov

A. I. Toropov contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2014arXiv

Spin-flip Raman scattering of the $Γ$-X mixed exciton in indirect band-gap (In,Al)As/AlAs quantum dots

The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $Γ$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for studying the exciton spin-level structure by resonant spin-flip Raman scattering, allowing us to accurately measure the anisotropic hole and isotropic electron $g$ factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of $Γ$-X-valley mixing, as evidenced by both experiment and theory.

preprint2013arXiv

Hysteretic phenomena in a 2DEG in quantum Hall effect regime studied in a transport experiment

We investigated experimentally non-equilibrium state of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime, studying the hysteresis of magnetoresistance of a 2DEG with a constriction. The large amplitude of the hysteresis enabled us to make the consistent phenomenological description of the hysteresis. We studied the dependence on the magnetic field sweep prehistory (minor loop measurements), recovered the anhysteretic curve, and studied the time dependence of the magnetoresistance. We showed that the hysteresis of magnetoresistance of a 2DEG in the QHE regime has significant phenomenological similarities with the hysteresis of magnetization of ferromagnetic materials, showing multistability, jumps of relaxation, and having the anhysteretic curve. Nevertheless, we revealed the crucial difference, manifested itself in an unusual inverted (anti-coercive) behavior of the magnetoresistance hysteresis. The time relaxation of the hysteresis has fast and slow regimes, similar to that of non-equilibrium magnetization of a 2DEG in QHE regime pointing to their common origin. We studied the dependence of the hysteresis loop area on the lithographic width of the constriction and found the threshold value of width $\sim$1.35 $μ$m beyond which the hysteresis is not observed. This points to the edge nature of the non-equilibrium currents (NECs) and allows us to determine the width of the NECs area ($\sim$0.5 $μ$m). We suggest the qualitative picture of the observed hysteresis, based on non-equilibrium redistribution of the electrons among the Landau level states and assuming huge imbalance between the population of bulk and edge electronic states.

preprint2010arXiv

Magnetic field induced transition in a wide parabolic well superimposed with superlattice

We study a $Al_{x}Ga_{x-1}As$ parabolic quantum wells (PQW) with $GaAs/Al_{x}Ga_{x-1}As$ square superlattice. The magnetotransport in PQW with intentionally disordered short-period superlattice reveals a surprising transition from electrons distribution over whole parabolic well to independent-layer states with unequal density. The transition occurs in the perpendicular magnetic field at Landau filling factor $ν\approx3$ and is signaled by the appearance of the strong and developing fractional quantum Hall (FQH) states and by the enhanced slope of the Hall resistance. We attribute the transition to the possible electron localization in the x-y plane inside the lateral wells, and formation of the FQH states in the central well of the superlattice, driven by electron-electron interaction.

preprint2004arXiv

Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime

We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5 K - 110 K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It was therefore possible to study the crossover region for the longitudinal conductivity and the Hall effect.