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Researcher profile

A. G. Pogosov

A. G. Pogosov contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Piezoelectric electromechanical coupling in nanomechanical resonators with two-dimensional electron gas

The electrical response of two-dimensional electron gas to vibrations of a nanomechanical cantilever containing it is studied. Vibrations of perpendicularly oriented cantilevers are experimentally shown to change oppositely the conductivity near their bases. This indicates the piezoelectric nature of electromechanical coupling. A physical model is developed, which quantitatively explains the experiment. It shows that the main origin of the conductivity change is a rapid change in the mechanical stress on the boundary between suspended and non-suspended areas, rather than the stress itself.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Hysteretic phenomena in a 2DEG in quantum Hall effect regime studied in a transport experiment

We investigated experimentally non-equilibrium state of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime, studying the hysteresis of magnetoresistance of a 2DEG with a constriction. The large amplitude of the hysteresis enabled us to make the consistent phenomenological description of the hysteresis. We studied the dependence on the magnetic field sweep prehistory (minor loop measurements), recovered the anhysteretic curve, and studied the time dependence of the magnetoresistance. We showed that the hysteresis of magnetoresistance of a 2DEG in the QHE regime has significant phenomenological similarities with the hysteresis of magnetization of ferromagnetic materials, showing multistability, jumps of relaxation, and having the anhysteretic curve. Nevertheless, we revealed the crucial difference, manifested itself in an unusual inverted (anti-coercive) behavior of the magnetoresistance hysteresis. The time relaxation of the hysteresis has fast and slow regimes, similar to that of non-equilibrium magnetization of a 2DEG in QHE regime pointing to their common origin. We studied the dependence of the hysteresis loop area on the lithographic width of the constriction and found the threshold value of width $\sim$1.35 $μ$m beyond which the hysteresis is not observed. This points to the edge nature of the non-equilibrium currents (NECs) and allows us to determine the width of the NECs area ($\sim$0.5 $μ$m). We suggest the qualitative picture of the observed hysteresis, based on non-equilibrium redistribution of the electrons among the Landau level states and assuming huge imbalance between the population of bulk and edge electronic states.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Universal behavior of magnetoresistance in quantum dot arrays with different degree of disorder

Magnetoresistance in two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero-magnetic field conductances, where the transport regime changes from hopping to diffusive one. The behavior of magnetoresistance is found to be similar for all samples - it is negative in weak fields and becomes positive with increase of magnetic field. The result apparently contradicts to existing theories. To explain experimental data we suggest that clusters of overlapping quantum dots are formed. These clusters are assumed to have metal-like conductance, the charge transfer taking place via hopping between the clusters. Relatively strong magnetic field shrinks electron wave functions decreasing inter-cluster hopping and, therefore, leading to a positive magnetoresistance. Weak magnetic field acts on "metallic" clusters destroying interference of electron wave function corresponding to different paths (weak localization) inside clusters. The interference may be restricted either by inelastic processes, or by the cluster size. Taking into account WL inside clusters and hopping between them within the effective medium approximation we extract effective parameters characterizing charge (magneto) transport.

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