Researcher profile

E. Bellingeri

E. Bellingeri contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2014arXiv

Two-band conductivity of a FeSe$_{0.5}$Te$_{0.5}$ film by reflectance measurements in the terahertz and infrared range

We report an infrared spectroscopy study of a 200 nm thick FeSe$_{0.5}$Te$_{0.5}$ film grown on LaAlO$_3$ with T$_c$=13.7 K. We analyze the 20 K normal state absolute reflectance R$_N$ measured over a broad infrared range and the reflectance ratio R$_S$/R$_N$, R$_S$ being the superconducting state reflectance, measured at 6 K in the terahertz range down to 12 cm$^{-1}$. We show that the normal state model conductivity is given by two Drude components, one of which much broader and intense than the other. In the superconducting state, we find that a gap $Δ$=37$\pm$3 cm$^{-1}$ opens up in the narrow Drude band only, while the broad Drude band results to be ungapped, at least in the explored spectral range. Our results show that only a two-band model can coherently describe both normal and superconducting state data.

preprint2013arXiv

Highly effective and isotropic pinning in epitaxial Fe(Se,Te) thin films grown on CaF2 substrates

We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2 (001) substrate. High critical current density values larger than 1 MA/cm2 in self field in liquid helium are reached together with a very weak dependence on the magnetic field and a complete isotropy. Analysis through Transmission Electron Microscopy evidences the presence of defects looking like lattice disorder at a very small scale, between 5 and 20 nm, which are thought to be responsible for such isotropic behavior in contrast to what observed on SrTiO3, where defects parallel to the c-axis enhance pinning in that direction

preprint2011arXiv

Anisotropic critical currents in FeSe0.5Te0.5 films and the influence of neutron irradiation

We report on measurements of the superconducting properties of FeSe05Te05 thin films grown on lanthanum aluminate. The films have high transition temperatures (above 19 K) and sharp resistive transitions in fields up to 15 T. The temperature dependence of the upper critical field and the irreversibility lines are steep and anisotropic, as recently reported for single crystals. The critical current densities, assessed by magnetization measurements in a vector VSM, were found to be well above 10^9 Am-2 at low temperatures. In all samples, the critical current as a function of field orientation has a maximum, when the field is oriented parallel to the film surface. The maximum indicates the presence of correlated pinning centers. A minimum occurs in three films, when the field is applied perpendicular to the film plane. In the forth film, instead, a local maximum caused by c-axis correlated pinning centers was found at this orientation. The irradiation of two films with fast neutrons did not change the properties drastically, where a maximum enhancement of the critical current by a factor of two was found.

preprint2011arXiv

Significant enhancement of upper critical fields by doping and strain in Fe-based superconductors

We report measurements of Hc2(T) up to 85 Tesla on Ba1-xKxAs2Fe2 single crystals and FeSe1-xTex films tuned by doping and strain. We observed an Hc2 enhancement by nearly 25 T at 30 K for the optimally-doped Ba1-xKxAs2Fe2 as compared to the previous results and extraordinarily high slopes dHc2/dT = 250-500 T/K near Tc in FeSe1-xTex indicating an almost complete suppression of the orbital pair-breaking. Theoretical analysis of Hc2(T) in FeSe1-xTex and the optimally doped Ba1-xKxAs2Fe2 predicts an inhomogeneous Fulde-Ferrel-Larkin-Ovchinnikov state for H//ab and T < 3-10 K, and shows that Hc2 in multiband Fe based superconductor can be enhanced by doping and strain much more effectively than by the conventional way of increasing disorder.

preprint2009arXiv

High quality epitaxial FeSe0.5Te0.5 thin films grown on SrTiO3 substrates by pulsed laser deposition

Superconducting epitaxial FeSe0.5Te0.5 thin films were prepared on SrTiO3 (001) substrates by pulsed laser deposition. The high purity of the phase, the quality of the growth and the epitaxy were studied with different experimental techniques: X-rays diffraction, reflection high energy electron diffraction, scanning tunnelling microscopy and atomic force microscopy. The substrate temperature during the deposition was found to be the main parameter governing sample morphology and superconducting critical temperature. Films obtained in the optimal conditions show an epitaxial growth with c axis perpendicular to the film surface and the a and b axis parallel to the substrates one, without the evidence of any other orientation. Moreover, such films show a metallic behavior over the whole measured temperature range and critical temperature above 17K, which is higher than the target one.

preprint2009arXiv

Tc=21K in epitaxial FeSe0.5Te0.5 thin films with biaxial compressive strain

High purity epitaxial FeSe0.5Te0.5 thin films with different thickness were grown by Pulsed Laser Ablation on different substrates. By varying the film thickness, Tc up to 21K were observed, significantly larger than the bulk value. Structural analyses indicated that the a axis changes significantly with the film thickness and is linearly related to the Tc. The latter result indicates the important role of the compressive strain in enhancing Tc. Tc is also related to both the Fe-(Se,Te) bond length and angle, suggesting the possibility of further enhancement.