Researcher profile

A. Gentils

A. Gentils contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2013arXiv

Effect of annealing on the superconducting properties of a-Nb(x)Si(1-x) thin films

a-Nb(x)Si(1-x) thin films with thicknesses down to 25 Å have been structurally characterized by TEM (Transmission Electron Microscopy) measurements. As-deposited or annealed films are shown to be continuous and homogeneous in composition and thickness, up to an annealing temperature of 500°C. We have carried out low temperature transport measurements on these films close to the superconductor-to-insulator transition (SIT), and shown a qualitative difference between the effect of annealing or composition, and a reduction of the film thickness on the superconducting properties of a-NbSi. These results question the pertinence of the sheet resistance R_square as the relevant parameter to describe the SIT.

preprint2012arXiv

Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

In germanium-based light detectors for scintillating bolometers, a SiO$_2$ anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25-35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at $\sim 630$ nm wavelength) that will characterise future neutrinoless double beta decay experiments on the isotope $^{82}$Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO$_2$ coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.

preprint2010arXiv

Tailoring strain in SrTiO3 compound by low energy He+ irradiation

The ability to generate a change of the lattice parameter in a near-surface layer of a controllable thickness by ion implantation of strontium titanate is reported here using low energy He+ ions. The induced strain follows a distribution within a typical near-surface layer of 200 nm as obtained from structural analysis. Due to clamping effect from the underlying layer, only perpendicular expansion is observed. Maximum distortions up to 5-7% are obtained with no evidence of amorphisation at fluences of 1E16 He+ ions/cm2 and ion energies in the range 10-30 keV.