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Source author record

A. G. de Oliveira

A. G. de Oliveira appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.opticsquant-phnlin.AOnlin.PSphysics.comp-ph

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Published work

6 published item(s)

preprint2020arXiv

Quantum-optical Description of Phase Conjugation of Vector Vortex Beams in Stimulated Parametric Down Conversion

We present a quantum optics approach for describing stimulated parametric down conversion in the two type-I crystal "sandwich" configuration, which allows for parametric interaction of vector vortex beams. We analyze the conditions for which phase conjugation of the seed vector beam occurs. We then use two strategies for defining generalized Stokes parameters to describe phase conjugation of vector vortex beams. These allow for geometrical representations, such as higher-order Poincaré spheres. Our results are useful for description and design of stimulated and spontaneous parametric down conversion experiments with vector vortex beams.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Real-time Phase Conjugation of Vector Vortex Beams

Vector vortex beams have played a fundamental role in the better understanding of coherence and polarization. They are described by spatially inhomogeneous polarization states, which present a rich optical mode structure that has attracted much attention for applications in optical communications, imaging, spectroscopy and metrology. However, this complex mode structure can be quite detrimental when propagation effects such as turbulence and birefringence perturb the beam. Optical phase conjugation has been proposed as a method to recover an optical beam from perturbations. Here we demonstrate full phase conjugation of vector vortex beams using three-wave mixing. Our scheme exploits a fast non-linear process that can be conveniently controlled via the pump beam. Our results pave the way for sophisticated, practical applications of vector beams.

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preprint2014arXiv

High Resolution Parameter Space from a Two Level Model on Semi-Insulating GaAs

Semi-insulating Gallium Arsenide (SI-GaAs) samples experimentally show, under high electric fields and even at room temperature, negative differential conductivity in N-shaped form (NNDC). Since the most consolidated model for n-GaAs, namely, "the model", proposed by E. Scholl was not capable to generate the NNDC curve for SI-GaAs, in this work we proposed an alternative model. The model proposed, "the two-valley model" is based on the minimal set of generation recombination equations for two valleys inside of the conduction band, and an equation for the drift velocity as a function of the applied electric field, that covers the physical properties of the nonlinear electrical conduction of the SI-GaAs system. The "two valley model" was capable to generate theoretically the NNDC region for the first time, and with that, we were able to build a high resolution parameter-space of the periodicity (PSP) using a Periodicity-Detection (PD) routine. In the parameter space were observed self-organized periodic structures immersed in chaotic regions. The complex regions are presented in a "shrimp" shape rotated around a focal point, which forms in large-scale a "snail shell" shape, with intricate connections between different "shrimps". The knowledge of detailed information on parameter spaces is crucial to localize wide regions of smooth and continuous chaos.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Quantized conductance in SnO2 nanobelts with rectangular hard-walls

Quantized conductance is reported in high-crystalline tin oxide (SnO2) nanobelt back-gate field-effect transistors, at low temperatures. The quantized conductance was observed as current oscillations in the drain current vs. gate voltage characteristics, and were analyzed considering the nanobelt as a quantum wire with rectangular cross-section hard-walls. The quantum confinement in the nanowires created conditions for the successive filling of the electron energy-subbands, as the gate voltage increases. When the source-drain voltage is changed the oscillations are not dislocated with respect to Vg, indicating flat-band subband energies at low temperatures. The subband separation was found to be in good agreement with the experimental observations, since the oscillations tend to disappear for T > 60K. Therefore, a novel quantum effect is reported in SnO2 nanobelts, which is expected to behave as bulk at zero electric gate fields.

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preprint2012arXiv

3D Hopping Conduction in SnO2 nanobelts

The temperature dependence of the electrical transport of a individual tin oxide nanobelt was measured, in darkness, from 400 to 5K. We found four intrinsic electrical transport mechanisms through the nanobelt. It starts with Thermal-Activation Conduction between 400 and 314K, Nearest-Neighbor Hopping conduction between 268 and 115K, and Variable Range Hopping conduction below 58K, with a crossover from the 3D-Mott to the 3D-Efros-Shklovskii regime at 16K. We claim that this sequence reveal the three-dimensional nature of the electrical transport in the SnO2 nanobelts, even they are expected to behave as one-dimensional systems.

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preprint2012arXiv

Photoluminescence and High Temperature Persistent Photoconductivity Experiments in SnO2 Nanobelts

The Persistent Photoconductivity (PPC) effect was studied in individual tin oxide (SnO2) nanobelts as a function of temperature, in air, helium, and vacuum atmospheres, and low temperature Photoluminescence measurements were carried out to study the optical transitions and to determine of the acceptor/donors levels and their best representation inside the band gap. Under ultraviolet (UV) illumination and at temperatures in the range of 200 to 400K we observed a fast and strong enhancement of the photoconductivity, and the maximum value of the photocurrent induced increases as the temperature or the oxygen concentration decreases. By turning off the UV illumination the induced photocurrent decays with lifetimes up to several hours. The photoconductivity and the PPC results were explained by adsorption and desorption of molecular oxygen at the surface of the SnO2 nanobelts. Based on the temperature dependence of the PPC decay an activation energy of 230 meV was found, which corresponds to the energy necessary for thermal ionization of free holes from acceptor levels to the valence band, in agreement with the photoluminescence results presented. The molecular-oxygen recombination with holes is the origin of the PPC effect in metal oxide semiconductors, so that, the PPC effect is not related to the oxygen vacancies, as commonly presented in the literature.

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