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J. C. Gonzalez

J. C. Gonzalez contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci math-ph math.MP quant-ph

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preprint2015arXiv

Complex oscillator and Painlevé IV equation

Supersymmetric quantum mechanics is a powerful tool for generating exactly solvable potentials departing from a given initial one. In this article the first- and second- order supersymmetric transformations will be used to obtain new exactly solvable potentials departing from the complex oscillator. The corresponding Hamiltonians turn out to be ruled by polynomial Heisenberg algebras. By applying a mechanism to reduce to second the order of these algebras, the connection with the Painlevé IV equation is achieved, thus giving place to new solutions for the Painlevé IV equation.

preprint2013arXiv

Quantized conductance in SnO2 nanobelts with rectangular hard-walls

Quantized conductance is reported in high-crystalline tin oxide (SnO2) nanobelt back-gate field-effect transistors, at low temperatures. The quantized conductance was observed as current oscillations in the drain current vs. gate voltage characteristics, and were analyzed considering the nanobelt as a quantum wire with rectangular cross-section hard-walls. The quantum confinement in the nanowires created conditions for the successive filling of the electron energy-subbands, as the gate voltage increases. When the source-drain voltage is changed the oscillations are not dislocated with respect to Vg, indicating flat-band subband energies at low temperatures. The subband separation was found to be in good agreement with the experimental observations, since the oscillations tend to disappear for T > 60K. Therefore, a novel quantum effect is reported in SnO2 nanobelts, which is expected to behave as bulk at zero electric gate fields.

preprint2012arXiv

3D Hopping Conduction in SnO2 nanobelts

The temperature dependence of the electrical transport of a individual tin oxide nanobelt was measured, in darkness, from 400 to 5K. We found four intrinsic electrical transport mechanisms through the nanobelt. It starts with Thermal-Activation Conduction between 400 and 314K, Nearest-Neighbor Hopping conduction between 268 and 115K, and Variable Range Hopping conduction below 58K, with a crossover from the 3D-Mott to the 3D-Efros-Shklovskii regime at 16K. We claim that this sequence reveal the three-dimensional nature of the electrical transport in the SnO2 nanobelts, even they are expected to behave as one-dimensional systems.