Researcher profile

A. G. Davies

A. G. Davies contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - UnverifiedVerification L1Unclaimed author
2works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2016arXiv

Distributed feedback terahertz frequency quantum cascade lasers with dual periodicity gratings

We have developed terahertz frequency quantum cascade lasers that exploit a double-periodicity distributed feedback grating to control the emission frequency and the output beam direction independently. The spatial refractive index modulation of the gratings necessary to provide optical feedback at a fixed frequency and, simultaneously, a far-field emission pattern centered at controlled angles, was designed through use of an appropriate wavevector scattering model. Single mode THz emission at angles tuned by design between 0° and 50° was realized, leading to an original phase-matching approach, lithographically independent, for highly collimated THz QCLs.

preprint2013arXiv

Terahertz quantum cascade lasers with thin resonant-phonon depopulation active regions and surface-plasmon waveguides

We report three-well, resonant-phonon depopulation terahertz quantum cascade lasers with semi-insulating surface-plasmon waveguides and reduced active region (AR) thicknesses. Devices with thicknesses of 10, 7.5, 6, and 5 μm are compared in terms of threshold current density, maximum operating temperature, output power and AR temperature. Thinner ARs are technologically less demanding for epitaxial growth and result in reduced electrical heating of devices. However, it is found that 7.5-μm-thick devices give the lowest electrical power densities at threshold, as they represent the optimal trade-off between low electrical resistance and low threshold gain.