Source author record

A. G. Davies

A. G. Davies appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2016arXiv

Distributed feedback terahertz frequency quantum cascade lasers with dual periodicity gratings

We have developed terahertz frequency quantum cascade lasers that exploit a double-periodicity distributed feedback grating to control the emission frequency and the output beam direction independently. The spatial refractive index modulation of the gratings necessary to provide optical feedback at a fixed frequency and, simultaneously, a far-field emission pattern centered at controlled angles, was designed through use of an appropriate wavevector scattering model. Single mode THz emission at angles tuned by design between 0° and 50° was realized, leading to an original phase-matching approach, lithographically independent, for highly collimated THz QCLs.

preprint2013arXiv

Terahertz quantum cascade lasers with thin resonant-phonon depopulation active regions and surface-plasmon waveguides

We report three-well, resonant-phonon depopulation terahertz quantum cascade lasers with semi-insulating surface-plasmon waveguides and reduced active region (AR) thicknesses. Devices with thicknesses of 10, 7.5, 6, and 5 μm are compared in terms of threshold current density, maximum operating temperature, output power and AR temperature. Thinner ARs are technologically less demanding for epitaxial growth and result in reduced electrical heating of devices. However, it is found that 7.5-μm-thick devices give the lowest electrical power densities at threshold, as they represent the optimal trade-off between low electrical resistance and low threshold gain.