Researcher profile

A. E. Lita

A. E. Lita contributes to research discovery and scholarly infrastructure.

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Trust 21 - EmergingVerification L1Unclaimed author
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Published work

6 published item(s)

preprint2015arXiv

A Near-Infrared 64-pixel Superconducting Nanowire Single Photon Detector Array with Integrated Multiplexed Readout

We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is employed to reduce the number of readout lines to 16. The cryogenic, optical, and electronic packaging to read out the array, as well as characterization measurements are discussed.

preprint2015arXiv

High-efficiency superconducting nanowire single-photon detectors fabricated from MoSi thin-films

We demonstrate high-efficiency superconducting nanowire single-photon detectors (SNSPDs) fabricated from MoSi thin-films. We measure a maximum system detection efficiency (SDE) of 87 +- 0.5 % at 1542 nm at a temperature of 0.7 K, with a jitter of 76 ps, maximum count rate approaching 10 MHz, and polarization dependence as low as 3.4 +- 0.7 % The SDE curves show saturation of the internal efficiency similar to WSi-based SNSPDs at temperatures as high as 2.3 K. We show that at similar cryogenic temperatures, MoSi SNSPDs achieve efficiencies comparable to WSi-based SNSPDs with nearly a factor of two reduction in jitter.

preprint2014arXiv

High-efficiency WSi superconducting nanowire single-photon detectors operating at 2.5 K

We investigate the operation of WSi superconducting nanowire single-photon detectors (SNSPDs) at 2.5 K, a temperature which is ~ 70 % of the superconducting transition temperature (TC) of 3.4 K. We demonstrate saturation of the system detection efficiency at 78 +- 2 % with a jitter of 191 ps. We find that the jitter at 2.5 K is limited by the noise of the readout, and can be improved through the use of cryogenic amplifiers. Operation of SNSPDs with high efficiency at temperatures very close to TC appears to be a unique property of amorphous WSi.

preprint2014arXiv

Superconducting nanowire single photon detectors fabricated from an amorphous Mo0.75Ge0.25 thin film

We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo0.75Ge0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 counts per second. Operation in a Gifford-McMahon (GM) cryocooler at 2.5 K is possible with system detection efficiencies (SDE) exceeding 20% for SNSPDs which have not been optimized for high detection efficiency.

preprint2013arXiv

A four-pixel single-photon pulse-position camera fabricated from WSi superconducting nanowire single-photon detectors

We demonstrate a scalable readout scheme for an infrared single-photon pulse-position camera consisting of WSi superconducting nanowire single-photon detectors (SNSPDs). For an N x N array, only 2 x N wires are required to obtain the position of a detection event. As a proof-of-principle, we show results from a 2 x 2 array.

preprint2012arXiv

Detecting Single Infrared Photons with 93% System Efficiency

Single-photon detectors (SPDs) at near infrared wavelengths with high system detection efficiency (> 90%), low dark count rate (< 1 counts per second, cps), low timing jitter (< 100 ps), and short reset time (< 100 ns) would enable landmark experiments in a variety of fields. Although some of the existing approaches to single-photon detection fulfill one or two of the above specifications, to date no detector has met all of the specifications simultaneously. Here we report on a fiber-coupled single-photon-detection system employing superconducting nanowire single photon detectors (SNSPDs) that closely approaches the ideal performance of SPDs. Our detector system has a system detection efficiency (SDE), including optical coupling losses, greater than 90% in the wavelength range λ= 1520-1610 nm; device dark count rate (measured with the device shielded from room-temperature blackbody radiation) of ~ 0.01 cps; timing jitter of ~ 150 ps FWHM; and reset time of 40 ns.