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A. Dyrdał

A. Dyrdał appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall

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Published work

8 published item(s)

preprint2022arXiv

Bilinear magnetoresistance in topological insulators: role of magnetic disorder

Bilinear magnetoresistance is a nonlinear transport phenomenon that scales linearly with the electric and magnetic fields, and appears in nonmagnetic systems with strong spin-orbit coupling, such as topological insulators (TIs). Using the semiclassical Boltzmann theory and generalized relaxation time approximation, we consider in detail the bilinear magnetoresistance in an effective model describing surface states of three-dimensional topological insulators. We show that the presence of magnetic impurities remarkably modifies the BMR signal. In general, scattering on magnetic impurities reduces magnitude of BMR. Apart from this, an additional modulation of the angular dependence of BMR appears when the spin-dependent component of the impurity potential dominates the scalar one.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Determining the Rashba parameter from the bilinear magnetoresistance response in a two-dimensional electron gas

Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is expanding. Conventionally, demanding techniques such as angle- and spin-resolved photoemission spectroscopy are required to determine the Rashba parameter $α_{R}$ that characterizes these systems. Here, we introduce a simple method that allows a quantitative extraction of $α_{R}$, through the analysis of the bilinear response of angle-dependent magnetotransport experiments. This method is based on the modulation of the Rashba-split bands under a rotating in-plane magnetic field. We show that our method is able to correctly yield the value of $α_{R}$ for a wide range of Fermi energies in the 2D electron gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface. By applying a gate voltage, we observe a maximum $α_{R}$ in the region of the band structure where interband effects maximize the Rashba effect, consistently with theoretical predictions.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Theory of bi-linear magnetoresistance within the minimal model for surface states in topological insulators

A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both electric field (current) and magnetic field. The mechanism is based on the interplay of current-induced spin polarization and scattering processes due to peculiar spin-orbit defects. The proposed mechanism is compared to that based on a Fermi surface warping, and is shown to be dominant at lower Fermi energies. We provide a consistent theoretical approach based on the Green function formalism and show that the magnetic field dependent relaxation processes in the presence of non-equilibrium current-induced spin polarization give rise to the BMR.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin Hall and spin Nernst effects in a two-dimensional electron gas with Rashba spin-orbit interaction: temperature dependence

Using the Matsubara Green function formalism we calculate the temperature dependence of spin Hall and spin Nernst conductivities of a two-dimensional electron gas with Rashba spin-orbit interaction in the linear response regime. In the case of spin Nernst effect we also include the contribution from spin-resolved orbital magnetization, which assures correct behavior of the spin Nernst conductivity in the zero-temperature limit. Analytical formulas for the spin Hall and spin Nernst conductivities are derived in some specific situations. Using the Ioffe-Regel localization criterion, we have also estimated the range of parameters where the calculated results for the spin Hall and spin Nernst conductivities are applicable. Analytical results show that the vertex correction totally suppresses the spin Hall conductivity at arbitrary temperature. The spin Nernst conductivity, in turn, vanishes at $T=0$ when the orbital contribution is taken into account, but generally is nonzero at finite temperatures.

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preprint2016arXiv

Spin-resolved orbital magnetization in Rashba two-dimensional electron gas

We calculate orbital spin-dependent magnetization in a two-dimensional electron gas with spin-orbit interaction of Rashba type. Such an orbital magnetization is admitted by the time-reversal symmetry of the system, and gives rise to spin currents when the system is not in thermal equilibrium. The theoretical approach is based on the linear response theory and the Matsubara Green's function formalism. To account for the spin-resolved orbital magnetization a spin-dependent vector potential has been introduced. The spin currents which appear in thermal nonequilibrium due to the spin-resolved orbital magnetization play an important role in the spin Nernst effect, and have to be included in order to correctly describe the low-temperature spin Nernst conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Current-induced spin polarization in graphene due to Rashba spin-orbit interaction

Spin polarization induced by an external electric field in graphene is considered theoretically in the linear response regime. The graphene is assumed to be deposited on a substrate which leads to the spin-orbit interaction of Rashba type. The induced spin polarization is shown to be in the graphene plane and perpendicular to the electric field. However, the spin polarization changes sign when the Fermi level, whose position can be controlled by an external gate voltage, crosses the Dirac points.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin Hall effect in AA-stacked bilayer graphene

Intrinsic spin Hall effect in the AA-stacked bilayer graphene is studied theoretically. The low-energy electronic spectrum for states in the vicinity of the Dirac points is obtained from the corresponding $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian. The spin Hall conductivity in the linear response regime is determined within the Green function formalism. Conditions for the existence of spin Hall insulator phase are also analyzed, and it is shown that the spin Hall insulator phase can exist for a sufficiently large spin-orbit coupling, which opens a gap in the spectrum. The electric field perpendicular to the graphene plane leads then to reduction of the gap width and suppression of the spin Hall insulator phase. The low temperature spin Nernst effect is also calculated from the zero temperature spin Hall conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thermally-induced spin polarization of a two dimensional electron gas

Spin polarization of a two-dimensional electron gas with Rashba spin-orbit interaction, induced by a thermo-current, is considered theoretically. It is shown that a temperature gradient gives rise to an in-plane spin polarization of the electron gas, which is normal to the temperature gradient. The low-temperature spin polarization changes sign when the Fermi level crosses bottom edge of the upper electronic subband. We also compare the results with spin polarization induced by an external electric field (current).

0 citations0 reviewsNo code linkedOpen access