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V. K. Dugaev

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Published work

38 published item(s)

preprint2022arXiv

Random spin-orbit gates in the system of a Topological insulator and a Quantum dot

The spin-dependent scattering process in a system of topological insulator and quantum dot is studied. The unitary scattering process is viewed as a gate transformation applied to an initial state of two electrons. Due to the randomness imposed through the impurities and alloying-induced effects of band parameters, the formalism of the random unitary gates is implemented. For quantifying entanglement in the system, we explored concurrence and ensemble-averaged Rényi entropy. We found that applied external magnetic field leads to long-range entanglement on the distances much larger than the confinement length. We showed that topological features of itinerant electrons sustain the formation of robust long-distance entanglement, which survives even in the presence of a strong disorder.

preprint2022arXiv

Rectification of the spin Seebeck current in noncollinear antiferromagnets

In the absence of an external magnetic field and a spin-polarized charge current, an antiferromagnetic system supports two degenerate magnon modes. An applied thermal bias activates the magnetic dynamics, leading to a magnon flow from the hot to the cold edge (magnonic spin Seebeck current). Both degenerate bands contribute to the magnon current but the orientations of the magnetic moments underlying the magnons are opposite in different bands. Therefore, while the magnon current is nonzero, the net spin current is zero.

preprint2020arXiv

Chiral Hall effect in the kink states in topological insulators with magnetic domain walls

In this article we consider the chiral Hall effect due to topologically protected kink states formed in topological insulators at boundaries between domains with differing topological invariants. Such systems include the surfaces of three dimensional topological insulators magnetically doped or in proximity with ferromagnets, as well as certain two dimensional topological insulators. We analyze the equilibrium charge current along the domain wall and show that it is equal to the sum of counter-propagating equilibrium currents flowing along external boundaries of the domains. In addition, we also calculate a dissipative current along the domain wall when an external voltage is applied perpendicularly to the wall.

preprint2020arXiv

Stratonovich-Ito integration scheme in ultrafast spin caloritronics

The magnonic spin Seebeck effect is a key element of spin caloritronic, a field that exploits thermal effects for spintronic applications. Early studies were focused on investigating the steady-state nonequilibrium magnonic spin Seebeck current, and the underlying physics of the magnonic spin Seebeck effect is now relatively well established. However, the initial steps of the formation of the spin Seebeck current are in the scope of recent interest. To address this dynamical aspect theoretically we propose here a new approach to the time-resolved spin Seebeck effect. Our method exploits the supersymmetric theory of stochastics and Ito - Stratonovich integration scheme. We found that in the early step the spin Seebeck current has both nonzero transversal and longitudinal components. As the magnetization dynamics approaches the steady-state, the transversal components decay through dephasing over the dipole-dipole reservoir. The time scale for this process is typically in the sub-nanoseconds pointing thus to the potential of an ultrafast control of the dynamical spin Seebeck during its buildup.

preprint2020arXiv

The optical tweezer of ferroelectric skyrmions

Strong magneto-electric coupling in two-dimensional helical materials leads to a peculiar type of topologically protected solutions -- skyrmions. Coupling between the net ferroelectric polarization and magnetization allows control of the magnetic texture with an external electric field. In this work we propose the model of optical tweezer -- a particular configuration of an external electric field and Gaussian laser beam that can trap or release the skyrmions in a highly controlled manner. Functionality of such a tweezer is visualized by micromagnetic simulations and model analysis.

preprint2016arXiv

Spin Hall and spin Nernst effects in a two-dimensional electron gas with Rashba spin-orbit interaction: temperature dependence

Using the Matsubara Green function formalism we calculate the temperature dependence of spin Hall and spin Nernst conductivities of a two-dimensional electron gas with Rashba spin-orbit interaction in the linear response regime. In the case of spin Nernst effect we also include the contribution from spin-resolved orbital magnetization, which assures correct behavior of the spin Nernst conductivity in the zero-temperature limit. Analytical formulas for the spin Hall and spin Nernst conductivities are derived in some specific situations. Using the Ioffe-Regel localization criterion, we have also estimated the range of parameters where the calculated results for the spin Hall and spin Nernst conductivities are applicable. Analytical results show that the vertex correction totally suppresses the spin Hall conductivity at arbitrary temperature. The spin Nernst conductivity, in turn, vanishes at $T=0$ when the orbital contribution is taken into account, but generally is nonzero at finite temperatures.

preprint2016arXiv

Spin-resolved orbital magnetization in Rashba two-dimensional electron gas

We calculate orbital spin-dependent magnetization in a two-dimensional electron gas with spin-orbit interaction of Rashba type. Such an orbital magnetization is admitted by the time-reversal symmetry of the system, and gives rise to spin currents when the system is not in thermal equilibrium. The theoretical approach is based on the linear response theory and the Matsubara Green's function formalism. To account for the spin-resolved orbital magnetization a spin-dependent vector potential has been introduced. The spin currents which appear in thermal nonequilibrium due to the spin-resolved orbital magnetization play an important role in the spin Nernst effect, and have to be included in order to correctly describe the low-temperature spin Nernst conductivity.

preprint2016arXiv

Topological insulator in a helicoidal magnetization field

A key feature of topological insulators is the robustness of the electron energy spectrum. At a surface of a topological insulator, Dirac point is protected by the characteristic symmetry of the system. The breaking of the symmetry opens a gap in the energy spectrum. Therefore, topological insulators are very sensitive to magnetic fields, which can open a gap in the electronic spectrum. Concerning "internal" magnetic effects, for example the situation with doped magnetic impurities, is not trivial. A single magnetic impurity is not enough to open the band gap, while in the case of a ferromagnetic chain of deposited magnetic impurities the Dirac point is lifted. However, a much more interesting case is when localized magnetic impurities form a chiral spin order. Our first principle density functional theory calculations have shown that this is the case for Fe deposited on the surface of Bi2Se3 topological insulator. But not only magnetic impurities can form a chiral helicoidal spin texture. An alternative way is to use chiral multiferroics (prototype material is LiCu2O2) that induce a proximity effect. The theoretical approach we present here is valid for both cases. We observed that opposite to a ferromagnetically ordered case, a chiral spin order does not destroy the Dirac point. We also observed that the energy gap appears at the edges of the new Brillouin zone. Another interesting result concerns the spin dynamics. We derived an equation for the spin density dynamics with a spin current and relaxation terms. We have shown that the motion of the conductance electron generates a magnetic torque and exerts a certain force on the helicoidal texture.

preprint2015arXiv

Enhanced photogalvanic effect in graphene due to Rashba spin-orbit coupling

We analyze theoretically optical generation of a spin-polarized charge current (photogalvanic effect) and spin polarization in graphene with Rashba spin-orbit coupling. An external magnetic field is applied in the graphene plane, which plays a crucial role in the mechanism of current generation. We predict a highly efficient resonant-like photogalvanic effect in a narrow frequency range which is determined by the magnetic field. A relatively less efficient photogalvanic effect appears in a broader frequency range, determined by the electron concentration and spin-orbit coupling strength.

preprint2015arXiv

Macroscopic description of the two-dimensional LaAlO$_3$/SrTiO$_3$ interface

We propose a simple analytical model to explain possible appearance of the metallic conductivity in the two-dimensional (2D) LaAlO$_3$/SrTiO$_3$ interface. Our model considers the interface within a macroscopic approach which is usual to semiconductor heterojunctions and is based on drift-diffusion equations. The solution of these equations allows to obtain the positions of band edges as a function of distances from the interface. We show that for the 2D metallic conductivity to appear at the interface, the constituting substances should have the same type (either electronic or hole) of conductivity; in the opposite case the possible transition to metallic phase has a three-dimensional character. The results of our model calculations are in agreement with available experimental data.

preprint2015arXiv

Magnon-driven longitudinal spin Seebeck effect in F|N and N|F|N structures: role of asymmetric in-plane magnetic anisotropy

The influence of an asymmetric in-plane magnetic anisotropy on the thermally activated spin current is studied theoretically for two different systems; (i) the system consisting of a ferromagnetic insulator in a direct contact with a nonmagnetic metal, and the sandwich structure consisting of a ferromagnetic insulating part sandwiched between two nonmagnetic metals. It is shown that when the difference between the temperatures of the two nonmagnetic metals in a structure is not large, the spin pumping currents from the magnetic part to the nonmagnetic ones are equal in amplitude and have opposite directions, so only the spin torque current contributes to the total spin current. The spin current flows then from the nonmagnetic metal with the higher temperature to the nonmagnetic metal having a lower temperature. Its amplitude varies linearly with the difference in temperatures. In addition, we have found that if the magnetic anisotropy is in the layer plane, then the spin current increases with the magnon temperature, while in the case of an out-of-plane magnetic anisotropy the spin current decreases when the magnon temperature enhances. Enlarging the difference between the temperatures of the nonmagnetic metals, the linear response becomes important, as confirmed by analytical expressions inferred from the Fokker-Planck approach and by the results obtained upon a full numerical integration of the stochastic Landau-Lifshitz-Gilbert equation.

preprint2015arXiv

Thermoelectric and thermospin transport in a ballistic junction of graphene

We consider theoretically a wide graphene ribbon, that on both ends is attached to electronic reservoirs which generally have different temperatures. The graphene ribbon is assumed to be deposited on a substrate, that leads to a spin-orbit coupling of Rashba type. We calculate the thermally induced charge current in the ballistic transport regime as well as the thermoelectric voltage (Seebeck effect). Apart from this, we also consider thermally induced spin current and spin polarization of the graphene ribbon. The spin currents are shown to have generally two components; one parallel to the temperature gradient and the other one perpendicular to this gradient. The latter corresponds to the spin current due to the spin Nernst effect. Additionally, we also consider the heat current between the reservoirs due to transfer of electrons.

preprint2015arXiv

Two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ inteface with a potential barrier

We present a tight binding description of electronic properties of the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO). The description assumes LAO and STO perovskites as sets of atomic layers in the $x$-$y$ plane, which are weakly coupled by an interlayer hopping term along the $z$ axis. The interface is described by an additional potential, $U_0$, which simulates a planar defect. Physically, the interfacial potential can result from either a mechanical stress at the interface or other structural imperfections. We show that depending on the potential strength, charge carriers (electrons or holes) may form an energy band which is localized at the interface and is within the band gaps of the constituting materials (LAO and STO). Moreover, our description predicts a {\it valve effect} at a certain critical potential strength, $U_{0cr}$, when the interface potential works as a valve suppressing the interfacial conductivity. In other words, the interfacial electrons become dispersionless at $U_0= U_{0cr}$, and thus cannot propagate. This critical value separates the {\it quasielectron} ($U_0<$ $U_{0cr}$) and {\it quasihole} ($U_0>$ $U_{0cr}$) regimes of the interfacial conductivity.

preprint2014arXiv

Optical spin injection in graphene with Rashba spin-orbit interaction

We calculate the efficiency of infrared optical spin injection in single-layer graphene with Rashba spin-orbit coupling and for in-plane magnetic field. The injection rate in the photon frequency range corresponding to the Rashba splitting is shown to be proportional to the ratio of the Zeeman and Rashba splittings. As a result, large spin polarization can be controllably achieved for experimentally available values of the spin-orbit coupling and in magnetic fields below 10 Tesla.

preprint2014arXiv

Spin relaxation related to the edge scattering in graphene

We discuss the role of spin-flip scattering of electrons from the magnetized edges in graphene nanoribbons. The spin-flip scattering is associated with strong fluctuations of the magnetic moments at the edge. Using the Boltzmann equation approach, which is valid for not too narrow nanoribbons, we calculate the spin relaxation time in the case of Berry-Mondragon and zigzag graphene edges. We also consider the case of ballistic nanoribbons characterized by very long momentum relaxation time in the bulk, when the main source of momentum and spin relaxation is the spin-dependent scattering at the edges. We found that in the case of zigzag edges, an anomalous spin diffusion is possible, which is related to very weak spin-flip scattering of electrons gliding along the nanoribbon edge.

preprint2013arXiv

Current-induced spin polarization in graphene due to Rashba spin-orbit interaction

Spin polarization induced by an external electric field in graphene is considered theoretically in the linear response regime. The graphene is assumed to be deposited on a substrate which leads to the spin-orbit interaction of Rashba type. The induced spin polarization is shown to be in the graphene plane and perpendicular to the electric field. However, the spin polarization changes sign when the Fermi level, whose position can be controlled by an external gate voltage, crosses the Dirac points.

preprint2013arXiv

Edge scattering of electrons in graphene

We discuss the contribution of edge scattering to the conductance of graphene nanoribbons and nanoflakes. Using different possible types of the boundary conditions for the electron wave function at the edge, we found dependences of the momentum relaxation time and conductance on the geometric sizes and on the carrier density. We also consider the case of ballistic nanoribbon and nanodisc, for which the edge scaterring is the main mechanism of momentum relaxation.

preprint2013arXiv

Fokker-Planck approach to the theory of magnon-driven spin Seebeck effect

Following the theoretical approach by Xiao et al [Phys. Rev. B 81, 214418 (2010)] to the spin Seebeck effect, we calculate the mean value of the total spin current flowing through a normalmetal/ ferromagnet interface. The spin current emitted from the ferromagnet to the normal metal is evaluated in the framework of the Fokker-Planck approach for the stochastic Landau-Lifshitz-Gilbert equation. We show that the total spin current depends not only on the temperature difference between the electron and the magnon baths, but also on the external magnetic field and magnetic anisotropy. Apart from this, the spin current is shown to saturate with increasing magnon temperature, and the saturation temperature increases with increasing magnetic field and/or magnetic anisotropy.

preprint2013arXiv

Thermally activated in-plane magnetization rotation induced by spin torque

We study the role of thermal fluctuations on the spin dynamics of a thin permalloy film with a focus on the behavior of spin torque and find that the thermally assisted spin torque results in new aspects of the magnetization dynamics. In particular, we uncover the formation of a finite, spin torque-induced, in-plane magnetization component. The orientation of the in-plane magnetization vector depends on the temperature and the spin-torque coupling. We investigate and illustrate that the variation of the temperature leads to a thermally-induced rotation of the in-plane magnetization.

preprint2013arXiv

Thermally-induced spin polarization of a two dimensional electron gas

Spin polarization of a two-dimensional electron gas with Rashba spin-orbit interaction, induced by a thermo-current, is considered theoretically. It is shown that a temperature gradient gives rise to an in-plane spin polarization of the electron gas, which is normal to the temperature gradient. The low-temperature spin polarization changes sign when the Fermi level crosses bottom edge of the upper electronic subband. We also compare the results with spin polarization induced by an external electric field (current).

preprint2012arXiv

Controlling shot noise in double-barrier magnetic tunnel junctions

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5V, where the influence of quantum well states is negligible. A weak enhancement of conductance and shot noise, observed at some voltages (especially above 0.5V), indicates the formation of quantum well states in the middle magnetic layer. The observed results open up new perspectives for a reliable magnetic control of the most fundamental noise in spintronic structures.

preprint2012arXiv

Dynamics of magnetic moments coupled to electrons and lattice oscillations

Inspired by the models of A. Rebei and G. J. Parker and A. Rebei et. al., we study a physical model which describes the behaviour of magnetic moments in a ferromagnet. The magnetic moments are associated to 3d electrons which interact with conduction band electrons and with phonons. We study each interaction separately and then collect the results assuming that the electron-phonon interaction can be neglected. For the case of the spin-phonon interaction, we study the derivation of the equations of motion for the classical spin vector and find that the correct behaviour, as given by the Brown equation for the spin vector and the Bloch equation, using the results obtained by D. A. Garanin for the average over fluctuations of the spin vector, can be obtained in the high temperature limit. At finite temperatures we show that the Markovian approximation for the fluctuations is not correct for time scales below some thermal correlation time $τ_{Th}$. For the case of electrons we workout a perturbative expansion of the Feynman-Vernon functional. We find the expression for the random field correlation function. The composite model (as well as the individual models) is shown to satisfy a fluctuation-dissipation theorem for all temperature regimes if the behaviour of the coupling constants of the phonon-spin interaction remains unchanged with the temperature. The equations of motion are derived.

preprint2012arXiv

Graphene in periodic deformation fields: dielectric screening and plasmons

We consider the effect of periodic scalar and vector potentials generated by periodic deformations of the graphene crystal lattice, on the energy spectrum of electrons. The dependence of electron velocity near the Dirac point on the periodic perturbations of different types is discussed. We also investigated the effect of screening of the scalar potential by calculating the dielectric function as a function of the wave length of the periodic potential. This calculation shows that the periodic scalar field is strongly suppressed by the screening. Using the dependence of electron velocity on the periodic field we also studied the variation of the plasmon spectra in graphene. We found that the spectrum of plasmon excitations can be effectively controlled by the periodic strain field.

preprint2012arXiv

Nonlinear anomalous Hall effect and negative magnetoresistance in a system with random Rashba field

We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the anomalous Hall effect. An example of such a system is a narrow-gap magnetic semiconductor-based symmetric quantum well. We show that the anomalous Hall conductivity reveals a strongly nonlinear dependence on the magnetization, decreasing exponentially at large spin density. We also show that electron scattering from a fluctuating Rashba field in a two-dimensional nonmagnetic electron system leads to a negative magnetoresistance arising solely due to spin-dependent effects.

preprint2012arXiv

Tunneling in double barrier junctions with 'hot spots'

We investigate electronic transport in epitaxial Fe(100)/MgO/Fe/MgO/Fe double magnetic tunnel junctions with soft barrier breakdown (hot spots). Specificity of these junctions are continious middle layer and Nitrogen doping of the MgO barriers which provides soft breakdown at biases about 0.5V. In the junctions with hot spots we observe quasi-periodic changes in the resistance as a function of bias voltage which point out formation of quantum well states in the middle Fe continuous free layer. The room-temperature oscillations have been observed in both parallel and antiparallel magnetic configurations and for both bias polarizations. A simple model of tunneling through hot spots in the double barrier magnetic junction is proposed to explain qualitatively this effect.

preprint2011arXiv

Anomalous Hall effect in superconductors with spin-orbit interaction

We calculate the anomalous Hall conductance of superconductors with spin-orbit interaction and with either uniform or local magnetization. In the first case we consider a uniform ferromagnetic ordering in a spin triplet superconductor, while in the second case we consider a conventional s-wave spin singlet superconductor with a magnetic impurity (or a diluted set of magnetic impurities). In the latter case we show that the anomalous Hall conductance can be used to track the quantum phase transition, that occurs when the spin coupling between the impurity and electronic spin density exceeds a certain critical value. In both cases we find that for large spin-orbit coupling the superconductivity is destroyed and the Hall conductance oscillates strongly.

preprint2011arXiv

Graphene in periodically alternating magnetic field: unusual quantization of the anomalous Hall effect

We study the energy spectrum and electronic properties of graphene in a periodic magnetic field of zero average with a symmetry of triangular lattice. The periodic field leads to formation of a set of minibands separated by gaps, which can be manipulated by external field. The Berry phase, related to the motion of electrons in $k$ space, and the corresponding Chern numbers characterizing topology of the energy bands are calculated analytically and numerically. In this connection, we discuss the anomalous Hall effect in the insulating state, when the Fermi level is located in the minigap. The results of calculations show that in the model of gapless Dirac spectrum of graphene the anomalous Hall effect can be treated as a sum of fractional quantum numbers, related to the nonequivalent Dirac points.

preprint2011arXiv

Indirect Interaction of Magnetic Domain Walls

We calculate the electron-mediated exchange interaction between two domain walls in magnetic wires. This corresponds to the equilibrium regime and, therefore, the interaction can be additionally controlled by an electric current. The exchange interaction is long ranged and oscillates as a function of the distance between the walls. It also depends oscillatory on the polarization angle of the walls, having the maximum value for collinear polarization.

preprint2011arXiv

Nonlinear spin Hall effect in GaAs (110) quantum wells

We consider stationary spin current in a (110)-oriented GaAs-based symmetric quantum well due to a nonlinear response to an external periodic electric field. The model assumed includes the Dresselhaus spin-orbit interaction and the random Rashba spin-orbit coupling. The Dresselhaus term is uniform in the quantum well plane and gives rise to spin splitting of the electron band. The external electric field of frequency $ω$ - in the presence of random Rashba coupling -- leads to virtual spin-flip transitions between spin subbands, generating stationary pure spin current proportional to the square of the field amplitude.

preprint2010arXiv

Conductance in Co/Al2O3/Si/Al2O3 permalloy with asymmetrically doped barrier

Permalloy magnetic tunnel junctions. Complementary low frequency noise measurements are used to understand the conductance results. The obtained data indicate the breakdown of the Coulomb blockade for thickness of the asymmetric silicon layer exceeding 1.2Å. The crossover in the conductance, the dependence of the tunnelling magnetoresistance with the bias voltage and the noise below 80K correspond to 1 monolayer coverage. Interestingly, the zero bias magnetoresistance remains nearly unaffected by the presence of the silicon layer. The proposed model uses Larkin-Matveev approximation of tunnelling through a single impurity layer generalized to 3D and takes into account the variation of the barrier shape with the bias voltage. The main difference is the localization of all the impurity levels within a single atomic layer. In the high thickness case, up to 1.8Å, we have introduced a phenomenological parameter, which reflects the number of single levels on the total density of silicon atoms.

preprint2010arXiv

Robust to impurity-scattering spin Hall effect in two-dimensional electron gas

We propose a mechanism of spin Hall effect in two-dimensional electron gas with spatially random Rashba spin-orbit interaction. The calculations based on the Kubo formalism and kinetic equation show that in contrast to the constant spin-orbit coupling, spin Hall conductivity in the random spin-orbit field is not totally suppressed by the potential impurity scattering. Even if the regular contribution is removed by the vertex corrections, the terms we consider, remain. Therefore, the intrinsic spin-Hall effect exists being, however, non-universal.

preprint2010arXiv

Spin dephasing and pumping in graphene due to random spin-orbit interaction

We consider spin effects related to the random spin-orbit interaction in graphene. Such a random interaction can result from the presence of ripples and/or other inhomogeneities at the graphene surface. We show that the random spin-orbit interaction generally reduces the spin dephasing (relaxation) time, even if the interaction vanishes on average. Moreover, the random spin-orbit coupling also allows for spin manipulation with an external electric field. Due to the spin-flip interband as well as intraband optical transitions, the spin density can be effectively generated by periodic electric field in a relatively broad range of frequencies.

preprint2010arXiv

Strong electron spin-Hall effect by a coherent optical potential

We demonstrate theoretically that a coherent manipulation of electron spins in low-dimensional semiconductor structures with spin-orbit coupling by infrared radiation is possible. The proposed approach is based on using a dipole force acting on a two-level system in a nonuniform optical field, similar to that employed in the design of the cold atoms diode. For ballistic electrons the spin-dependent force, proportional to the intensity of external radiation, leads to a spin-Hall effect and resulting spin separation even if the spin-orbit coupling itself does not allow for these effects. Achievable spatial separation of electrons with opposite spins can be of the order of several tenth of a micron, an order of magnitude larger than can be produced by the charged impurity scattering in the diffusive regime.

preprint2009arXiv

Room-temperature ferromagnetism in dielectric GaN(Gd)

We present an explanation of recently observed giant magnetic moment and room-temperature ferromagnetism in the dielectric GaN doped with Gd. Our approach uses the polarization mechanism of exchange interaction, which occurs if the d-level of Gd appears in the bandgap close to the valence band edge. Calculated ferromagnetic critical temperature and the value of the magnetic moment well correspond to experimental findings.

preprint2009arXiv

Spin Hall effect in a system of Dirac fermions in the honeycomb lattice with intrinsic and Rashba spin-orbit interaction

We consider spin Hall effect in a system of massless Dirac fermions in a graphene lattice. Two types of spin-orbit interaction, pertinent to the graphene lattice, are taken into account - the intrinsic and Rashba terms. Assuming perfect crystal lattice, we calculate the topological contribution to spin Hall conductivity. When both interactions are present, their interplay is shown to lead to some peculiarities in the dependence of spin Hall conductivity on the Fermi level.

preprint2007arXiv

Role of a spin-flip scatterer in a magnetized Luttinger liquid

We study the spin-dependent scattering of charge carriers in a magnetized one dimensional Luttinger liquid from a localized non-homogeneous magnetic field, which might be brought about by the stray field of magnetic tip near a uniform liquid, or by a transverse domain wall (DW) between two oppositely magnetized liquids. From a renormalization group treatment of the electron interactions we deduce scaling equations for the transmission and reflection amplitudes as the bandwidth is progressively reduced to an energy scale set by the temperature. The repulsive interactions dictate two possible zero temperature insulator fixed points: one in which electrons are reflected in the same spin channel and another where the electron spin is reversed upon reflection. In the latter case, a finite spin current emerges in the absence of a charge current at zero temperature and the Friedel oscillations form a transverse spiraling spin density. Adding a purely potential scattering term has no effect on the fixed points of a uniformly magnetized liquid. For a DW we find that the introduction of potential scattering stabilizes the spin-flip insulator phase even if the single-particle spin-flip scattering produced by the DW is arbitrarily weak. The potential can be induced externally, e.g. by a local gate voltage or a constriction, providing a means for controlling the transport properties of the wire.

preprint2006arXiv

Exchange interaction of magnetic impurities in graphene

The indirect exchange interaction between magnetic impurities localized in a graphene plane is considered theoretically, with the influence of intrinsic spin-orbit interaction taken into account. Such an interaction gives rise to an energy gap at the Fermi level, which makes the usual RKKY model not applicable. The results show that the effective indirect exchange interaction is described by a range function which decays exponentially with the distance between magnetic moments. The interaction is also shown to depend on whether the two localized moments belong to the same sublattice or are located in two different sublattices.

preprint2005arXiv

Macroscopic description of current induced switching due to spin-transfer

We develop a macroscopic description of the current-induced torque due to spin transfer in a layered system consisting of two ferromagnetic layers separated by a nonmagnetic layer. The description is based on i) the classical spin diffusion equations for the distribution functions used in the theory of CPP-GMR, ii) the relevant boundary conditions for the longitudinal and transverse components of the spin current in the situation of quasi-interfacial absorption of the transverse components in a magnetic layer. The torque is expressed as a function of the usual parameters derived from CPP-GMR experiments and two additional parameters involved in the transverse boundary conditions. Our model is used to describe qualitatively normal and inverse switching phenomena studied in recent experiments. We also present a structure for which we predict only states of steady precession above a certain critical current. We finally discuss the limits of a small angle between magnetic moments of the ferromagnetic layers and of vanishing imaginary part of the mixing conductance.