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Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E$_{2g}$ phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudo-magnetic fields lead to increased scattering intensity inside the anti-crossing gap, consistent with the experiment.

preprint2013arXivOpen access
Y. KimJ. M. PoumirolA. LombardoN. G. KaluginT. GeorgiouY. J. KimK. S. NovoselovA. C. FerrariJ. KonoO. KashubaV. I. Fal'koD. Smirnov
cond-mat.mes-hall
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Open access12 authors1 topic
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Y. KimJ. M. PoumirolA. LombardoN. G. KaluginT. GeorgiouY. J. KimK. S. NovoselovA. C. FerrariJ. KonoO. KashubaV. I. Fal'koD. Smirnov

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