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A. Arya

A. Arya contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci

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preprint2019arXiv

A novel approach to quantify the structural distortions of U/Th snub-disphenoids and their role in zircon to reidite type phase transitions of uranothorite

Our density functional study reveals a peculiar relation between the normalized Th content i.e. Th/(U+Th) and the hydrostatic pressure enforcing zircon to reidite type transition in uranothorite solid solution. We found that the transition pressure exhibits a minimum when Th/(U+Th) = 0.50 i.e. when the unit cell contains equal amount of U and Th. Any change in normalized Th content, as we move towards the U and Th end-members of the series, shows a significant jump in zircon-reidite transition pressure. In order to explain this behavior, we proposed a novel method of quantifying the distortions of U/Th-coordination polyhedra which manifest themselves as a triangular dodecahedron or snub-disphenoid. We have theoretically defined two parameters: one related to the two geometrically different U/Th-O bond lengths, having a fixed ratio between them for regular triangular dodecahedra irrespective of the volume and the other with three kinds of O-U-O and O-Th-O bond angles with multiplicities of 2, 4 and 12, respectively. The bond angle distortion for both U and Th-polyhedra were found to show a maximum in zircon phase and a minimum in reidite phase corresponding to Th/(U+Th) = 0.5. Since, the difference in angular distortion is minimum in case of Th/(U+Th) = 0.5, a lesser hydrostatic pressure is capable of triggering the transition, compared to the other members of this series. The bond length distortion is also characterized by a maximum in the reidite phase at the equal concentration of U and Th. Our finding is also complemented by the minimum compressibility observed in the zircon phase when the atomic percentage of U and Th are equal.

preprint2016arXiv

Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics

Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba-type spin-orbit effect on PrGe [010] surface in the paramagnetic phase with Rashba coefficient α_R=5 eVÅ. Significant changes in the electronic band structure has been observed across the phase transitions from paramagnetic to antiferromagnetic (44 K) and from antiferromagnetic to the ferromagnetic ground state (41.5 K). We find that Pr 4f states in PrGe is strongly hybridized with the Pr 5d and Ge 4s-4p states near the Fermi level. The behavior of Rashba effect is found to be different in the k_x and the k_y directions showing electron-like and the hole-like bands, respectively. The possible origin of Rashba effect in the paramagnetic phase is related to the anti-parallel spin polarization present in this system. First-principles density functional calculations of Pr terminated surface with the anti-parallel spins shows a fair agreement with the experimental results. We find that the anti-parallel spins are strongly coupled to the lattice such that the PrGe system behaves like weak ferromagnetic system. Analysis of the energy dispersion curves at different magnetic phases showed that there is a competition between the Dzyaloshinsky-Moriya interaction and the exchange interaction which gives rise to the magnetic ordering in PrGe. Supporting evidences of the presence of Dzyaloshinsky-Moriya interaction are observed as anisotropic magnetoresistance with respect to field direction and first-order type hysteresis in the X-ray diffraction measurements. A giant negative magnetoresistance of 43% in the antiferromagnetic phase and tunable Rashba parameter with temperature across the magnetic transitions makes this material a suitable candidate for technological application in the antiferromagnetic spintronic devices.

preprint2014arXiv

Estimate of the Coulomb Correlation Energy in CeAg$_2$Ge$_2$ from Inverse Photoemission and High Resolution Photoemission Spectroscopy

The occupied and the unoccupied electronic structure of CeAg$_2$Ge$_2$ single crystal has been studied using high resolution photoemission and inverse photoemission spectroscopy respectively. High resolution photoemission reveals the clear signature of Ce $4f$ states in the occupied electronic structure which was not observed earlier due to the poor resolution. The coulomb correlation energy in this system has been determined experimentally from the position of the $4f$ states above and below the Fermi level. Theoretically the correlation energy has been determined by using the first principles density functional calculations within the generalized gradient approximations taking into account the strong intra-atomic (on-site) interaction Hubbard $U_{eff}$ term. Although the valence band calculated with different $U_{eff}$ does not show significant difference, but the substantial changes are observed in the conduction band. The estimated value of correlation energy from both the theory and the experiment is $\approx$4.2~eV for CeAg$_2$Ge$_2$.