Researcher profile

A. Alvarez

A. Alvarez contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

f(R) wormholes embedded in a pseudo--Euclidean space $E^{5}$

This work is devoted to the study of analytic wormhole solutions within the framework of $f(R)$ gravity theory. To check the possibility of having wormhole structures satisfying energy conditions, by means of the class I approach the pair $\{Φ(r), b(r)\}$ describing the wormhole geometry has been obtained. Then, in conjunction with a remarkably $f(R)$ gravity model, the satisfaction of the null and weak energy conditions at the wormhole throat and its neighborhood is investigated. To do so, some constant parameters have been bounded restricting the space parameter. In this concern, the $f(R)$ gravity model and its derivatives are playing a major role, specially in considering the violation of the non--existence theorem. Furthermore, the shape function should be bounded from above by the Gronwall--Bellman shape function, where the red--shift function plays a relevant role. By analyzing the main properties at the spatial stations and tidal accelerations at the wormhole throat, possibilities and conditions for human travel are explored.

preprint2020arXiv

Zinc-Blende group III-V/group IV epitaxy: importance of the miscut

Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at the atomic scale by scanning tunneling microscopy. The steps arising from the miscut allow growth rate imbalance between the two phases of the crystal and the growth conditions can deeply modify the imbalance coefficient, as illustrated with GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration can be achieved even on low miscut substrates.