Researcher profile

A. A. Toropov

A. A. Toropov contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods

Core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multicolor displays. Such applications, however, are still a challenge because intensity of red band is too weak as compared with blue and green ones. To clarify the problem, we have performed power and temperature dependent, as well as time-resolved measurements of photoluminescence (PL) in NRs of different In content and diameter. These studies have shown that the dominant PL bands originate from nonpolar and semipolar QWs, while a broad yellow-red band arises mostly from defects in the GaN core. Intensity of red emission from the polar QWs at the NR tip is fatally small. Our calculation of electromagnetic field distribution inside the NRs shows a low density of photon states in the tip that suppresses the red radiation. We suggest a design of hybrid NRs, in which polar QWs, located inside the GaN core, are pumped by UV-blue radiation of nonpolar QWs. Possibilities of radiative recombination rate enhancement by means of the Purcell effect are discussed.

preprint2014arXiv

The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots

We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 1/cm for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 40 ps were measured for the structures with high and low material gains respectively. The difference in the capture times are related to the fact that for the symmetric waveguide, carriers diffuse into the active region from the uppermost ZnMgSSe cladding layer, yielding a longer rise time for the pump-probe signals for this sample.

preprint2011arXiv

Long-lived electron spin coherence in CdSe/ZnSSe self-assembled quantum dots

The electron spin coherence in n-doped and undoped, self-assembled CdSe/Zn(S,Se) quantum dots has been studied by time-resolved pump-probe Kerr rotation. Long-lived spin coherence persisting up to 13 ns after spin orientation has been found in the n-doped quantum dots, outlasting significantly the lifetimes of charge neutral and negatively charged excitons of 350 - 530 ps. The electron spin dephasing time as long as 5.6 ns has been measured in a magnetic field of 0.25 T. Hyperfine interaction of resident electrons with a nuclear spin fluctuations is suggested as the main limiting factor for the dephasing time. The efficiency of this mechanism in II-VI and III-V quantum dots is analyzed.