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Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling

We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of bulk doping and bulk-surface tunneling rate. Our results reveal parameter regimes for both weak localization and weak antilocalization, and include diffusive Weyl semimetals as a special case.

preprint2012arXivOpen access
Ion GarateLeonid Glazman
cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat.dis-nn
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Ion GarateLeonid Glazman

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