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Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As

Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.

preprint2006arXivOpen access
M. YamanouchiD. ChibaF. MatsukuraT. DietlH. Ohno
cond-mat.mtrl-sci
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Open access5 authors1 topic
Imported metadata coverageMissing code, dataset, citation and institution fields are tracked without dominating the paper.Details
Citations: 0Reviews: 0Saves: 0Code: not linkedDataset: not linkedInstitutions: 0

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M. YamanouchiD. ChibaF. MatsukuraT. DietlH. Ohno

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