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D. Chiba

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2016arXiv

Current-induced asymmetric magnetoresistance due to energy transfer via quantum spin-flip process

Current-induced magnetization excitation is a core phenomenon for next-generation magnetic nanodevices, and has been attributed to the spin-transfer torque (STT) that originates from the transfer of the spin angular momentum between a conduction electron and a local magnetic moment through the exchange coupling. However, the same coupling can transfer not only spin but also energy, though the latter transfer mechanism has been largely ignored. Here we report on experimental evidence concerning the energy transfer in ferromagnet/heavy metal bilayers. The magnetoresistance (MR) is found to depend significantly on the current direction down to low in-plane currents, for which STT cannot play any significant role. Instead we find that the observed MR is consistent with the energy transfer mechanism through the quantum spin-flip process, which predicts short wavelength, current-direction-dependent magnon excitations in the THz frequency range. Our results unveil another aspect of current-induced magnetic excitation, and open a channel for the dc-current-induced generation of THz magnons.

preprint2016arXiv

Switching local magnetization by electric-field-induced domain wall motion

Electric field effect on magnetism is an appealing technique for manipulating the magnetization at a low cost of energy. Here, we show that the local magnetization of the ultra-thin Co film can be switched by just applying a gate electric field without an assist of any external magnetic field or current flow. The local magnetization switching is explained by the nucleation and annihilation of the magnetic domain through the domain wall motion induced by the electric field. Our results lead to external field free and ultra-low energy spintronic applications.

preprint2015arXiv

Extraction of the Anomalous Nernst Effect in the Electric Measurement of the Spin Orbit Torque

Spin orbit torque has been intensively investigated because of its high energy efficiency in manipulating a magnetization. Although various methods for measuring the spin orbit torque have been developed so far, the measurement results often show inconsistency among the methods, implying that an electromotive force, such as Nernst effect, irrelevant to the spin orbit torque may affect the measurement results as an artifact. In this letter, we developed a unique method to distinguish the spin orbit torque and the anomalous Nernst effect. The measurement results show that the spin orbit torque can be underestimated up to 50% under the influence of the anomalous Nernst effect.

preprint2011arXiv

Anomalous Hall effect in field-effect structures of (Ga,Mn)As

The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance $σ_{xy}$ has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between $σ_{xy}$ and $σ_{xx}$, similar to the one observed previously for thicker samples, is recovered.

preprint2010arXiv

Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs

The Curie temperature TC is investigated as a function of the hole concentration p in thin films of ferromagnetic semiconductor (Ga,Mn)As. The magnetic properties are probed by transport measurements and p is varied by the application of an external electric field in a field-effect transistor configuration. It is found that TC is proportional to p^γ, where the exponent γ= 0.19 \pm 0.02 over a wide range of Mn compositions and channel thicknesses. The magnitude of gamma is reproduced by a p-d Zener model taking into account nonuniform hole distribution along the growth direction, determined by interface states and the applied gate electric fields.

preprint2006arXiv

Domain-wall resistance in ferromagnetic (Ga,Mn)As

A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is one order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced misstracing of the carrier spins subject to spatially varying magnetization.