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Tunneling transport in a few monolayer-thick WS2/graphene heterojunction

This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical transport in WS2 and MoS2 TMDs in graphene/TMD/metal heterostructures revealed that WS2 exhibits tunnel barrier characteristics when its thickness is between 2 to 5 monolayers, whereas MoS2 experiences a transition from tunneling to thermionic emission transport with increasing thickness within the same range. Tunnel resistance in a graphene/WS2/metal heterostructure therefore increases exponentially with the number of WS2 layers, revealing the tunnel barrier height of WS2 to be 0.37 eV.

preprint2014arXivOpen access
Takehiro YamaguchiRai MoriyaYoshihisa InoueSei MorikawaSatoru MasubuchiKenji WatanabeTakashi TaniguchiTomoki Machida
cond-mat.mes-hall
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Open access8 authors1 topic
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Takehiro YamaguchiRai MoriyaYoshihisa InoueSei MorikawaSatoru MasubuchiKenji WatanabeTakashi TaniguchiTomoki Machida

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