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Tomoki Machida

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Published work

23 published item(s)

preprint2026arXiv

Emergent Cooperative Superstructures via Order-Disorder Kinetics in Molecule-Intercalated NbSe2

The design of quantum states at heterointerfaces has enabled a variety of emergent phenomena. Among them, molecular intercalation superlattices have attracted attention as tunable hybrid materials, formed by inserting organic molecules into van der Waals crystals, where molecular structure and chemistry provide new degrees of freedom. Traditionally, the intercalated molecules have been regarded as inactive spacers, while possible molecular ordering and its impact on the host lattice have remained largely unexplored. Here, we report the discovery of a cooperative superstructure (CSS) phase in molecule intercalated NbSe2, where ordering of the guest molecules induce a concomitant superstructure in the NbSe2 host lattice, characterized by a moiré structure due to incommensurability between the molecular layer and the inorganic lattice. Synchrotron X-ray diffraction reveals the emergence of CSS phase, accompanied by crystal symmetry lowering. Complementary resistivity and thermal-quench measurements show that the transition is governed by unusually slow order-disorder kinetics, so that the CSS phase can be selectively accessed under standard laboratory cooling rates. This kinetic behavior arises from slow molecular dynamics coupled to the host lattice, contrasting with fast charge or magnetic ordering in inorganic solids. Our findings establish molecular ordering as a route for engineering heterointerfaces, enabling thermally programmable superstructures.

preprint2020arXiv

Selective Etching of Hexagonal Boron Nitride by High-Pressure CF4 Plasma for Individual One-dimensional Ohmic Contacts to Graphene Layers

We describe a technique for making one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved by increasing the plasma pressure, which enables etching of h-BN, while graphene acts as an etch stop to protect underlying h-BN. A low-pressure O2 plasma anisotropically etches graphene in the vertical direction, which exposes graphene edges at h-BN sidewalls. Despite the O2 plasma bombardment, the lower h-BN layer functions as an insulating layer. Thus, this method allows us to pattern metal electrodes on h-BN over a second graphene layer. Subsequent electron-beam lithography and evaporation fabricate metal contacts at the graphene edges that are active down to cryogenic temperatures. This fabrication method is demonstrated by the preparation of a graphene Hall bar with a graphite back-gate and double bilayer-graphene Hall bar devices. The high flexibility of the device geometries enabled by this method creates access to a variety of experiments on electrostatically coupled graphene layers.

preprint2019arXiv

Deep-Learning-Based Image Segmentation Integrated with Optical Microscopy for Automatically Searching for Two-Dimensional Materials

Deep-learning algorithms enable precise image recognition based on high-dimensional hierarchical image features. Here, we report the development and implementation of a deep-learning-based image segmentation algorithm in an autonomous robotic system to search for two-dimensional (2D) materials. We trained the neural network based on Mask-RCNN on annotated optical microscope images of 2D materials (graphene, hBN, MoS2, and WTe2). The inference algorithm is run on a 1024 x 1024 px2 optical microscope images for 200 ms, enabling the real-time detection of 2D materials. The detection process is robust against changes in the microscopy conditions, such as illumination and color balance, which obviates the parameter-tuning process required for conventional rule-based detection algorithms. Integrating the algorithm with a motorized optical microscope enables the automated searching and cataloging of 2D materials. This development will allow researchers to utilize unlimited amounts of 2D materials simply by exfoliating and running the automated searching process.

preprint2016arXiv

Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy

We demonstrate electrical spin injection into multilayer graphene (MLG) in a lateral spin valve device from a highly spin-polarized Co2FeSi (CFS) Huesler electrode. Exfoliated MLG was transferred onto pre-patterned epitaxial CFS wires grown on an Si(111) substrate by a polymer-based transfer method. This method enabled us to fabricate multiple single-crystal CFS electrodes in contact with MLG. Electrical spin injection from CFS to MLG was detected through non-local magnetoresistance (MR) measurement. A non-local spin signal of 430 ohm was observed; this is the largest value among all reported non-local MR values in graphene-based devices.

preprint2015arXiv

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2. The vdW interlayer coupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material through the vdW junction.

preprint2015arXiv

Edge-channel interferometer at the graphene quantum Hall pn junction

We demonstrate a quantum Hall edge-channel interferometer in a high-quality graphene pn junction under a high magnetic field. The co-propagating p and n quantum Hall edge channels traveling along the pn interface functions as a built-in Aharanov-Bohm-type interferometer, the interferences in which are sensitive to both the external magnetic field and the carrier concentration. The trajectories of peak and dip in the observed resistance oscillation are well reproduced by our numerical calculation that assumes magnetic flux quantization in the area enclosed by the co-propagating edge channels. Coherent nature of the co-propagating edge channels are confirmed by the checkerboard-like pattern in the dc-bias and magnetic-field dependences of the resistance oscillations.

preprint2015arXiv

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10^5. These results point to the potential high performance of the graphene/MoSe2 vdW heterostructure for electronics applications.

preprint2015arXiv

Imaging ballistic carrier trajectories in graphene using scanning gate microscopy

We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local electric field generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector.

preprint2015arXiv

Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors

We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus the external electric field. Under the application of a bias voltage VB between graphene and the metal layer in the graphene/MoS2/metal heterostructure for driving current through the van der Waals interface, the electric field across the MoS2 dielectric induces a shift in the Fermi level of graphene. When the Fermi level of graphene coincides with the Dirac point, a significant nonlinearity appears in the measured I-V curve, thus enabling us to perform spectroscopy of the Dirac point. By detecting the Dirac point for different back-gate voltages, we revealed that the capacitance of the nanometer-thick MoS2 layer can be determined from a simple DC transport measurement.

preprint2015arXiv

Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON-OFF ratio

Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer enables us to modulate the Schottky barrier height; thus gives rise to the control of the current flow across the interface. By analyzing the temperature dependence of the conductance, the modulation of Schottky barrier height Δϕ has been directly determined. We observed significant MoS2 layer number dependence of Δϕ. Moreover, we demonstrate that the device which shows larger Δϕ exhibits larger current modulation; this is consistent with the fact that the transport of these devices is dominated by graphene/MoS2 Schottky barrier.

preprint2014arXiv

Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well

The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba SOI. Our findings reveal that the heavy hole (HH) in strained-Ge is a purely cubic-Rashba-system, which is consistent with the spin angular momentum mj = +-3/2 nature of the HH wave function.

preprint2014arXiv

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current ratios or ON current densities. We fabricate a graphene/MoS2/metal vertical heterostructure by using mechanical exfoliation and dry transfer of graphene and MoS2 layers. The van der Waals interface between graphene and MoS2 exhibits a Schottky barrier, thus enabling the possibility of well-defined current rectification. The height of the Schottky barrier can be strongly modulated by an external gate electric field owing to the small density of states of graphene. We obtain large current modulation exceeding 10^5 simultaneously with a large current density of ~10^4 A/cm^2 , thereby demonstrating the superior performance of the exfoliated-graphene/MoS2/metal vertical field effect transistor

preprint2014arXiv

Tunneling transport in a few monolayer-thick WS2/graphene heterojunction

This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical transport in WS2 and MoS2 TMDs in graphene/TMD/metal heterostructures revealed that WS2 exhibits tunnel barrier characteristics when its thickness is between 2 to 5 monolayers, whereas MoS2 experiences a transition from tunneling to thermionic emission transport with increasing thickness within the same range. Tunnel resistance in a graphene/WS2/metal heterostructure therefore increases exponentially with the number of WS2 layers, revealing the tunnel barrier height of WS2 to be 0.37 eV.

preprint2013arXiv

Electrical spin injection into graphene through monolayer hexagonal boron nitride

We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni81Fe19/ML h-BN/BLG/h-BN structure is fabricated using a micromechanical cleavage and dry transfer technique. The transport properties across the ML h-BN layer exhibit tunnel barrier characteristics. Spin injection into BLG has been detected through non local magnetoresistance measurements.

preprint2013arXiv

Observation of finite excess noise in the voltage-biased quantum Hall regime as a precursor for breakdown

We performed noise measurements in a two-dimensional electron gas to investigate the nonequilibrium quantum Hall effect (QHE) state. While excess noise is perfectly suppressed around the zero-biased QHE state reflecting the dissipationless electron transport of the QHE state, considerable finite excess noise is observed in the breakdown regime of the QHE. The noise temperature deduced from the excess noise is found to be of the same order as the energy gap between the highest occupied Landau level and the lowest empty one. Moreover, unexpected finite excess noise is observed at a finite source-drain bias voltagesmaller than the onset voltage of the QHE breakdown, which indicates finite dissipation in the QHE state and may be related to the prebreakdown of the QHE.

preprint2013arXiv

Resistive detection of nuclear spins in a single quantum dot under Kondo effect regime

We study dynamic polarization and resistive detection of nuclear spins in a semiconductor quantum dot (QD) under the Kondo effect regime. We find that the differential conductance spectra of the QD exhibit hysteresis under the Kondo effect regime in magnetic fields. Relevance of nuclear spins to the hysteresis is confirmed by the detection of nuclear magnetic resonance signals by monitoring the differential conductance. We attribute the origin of the hysteresis to the dynamic nuclear spin polarization (DNP) induced in the QD. Using the DNP, we demonstrate nuclear spin relaxation rate measurements in the QD under the Kondo effect regime.

preprint2013arXiv

Spin Relaxation in Weak Localization Regime in Multilayer Graphene Spin Valves

The temperature dependence of the spin relaxation time in multilayer graphene (MLG) spin valve devices was measured using a non-local magnetoresistance (NLMR) measurement. A weak localization (WL) was observed from magnetoresistance (MR) measurements below 70 K, suggesting coherent transport of the charge carriers. Within the same temperature range, we observed a large increase in the spin relaxation time and spin diffusion length even though the diffusion constant Ds was suppressed by the WL. This demonstrated that the spin relaxation time in MLG could be significantly extended when the charge experiences quantum interference effect in the coherent charge transport regime.

preprint2012arXiv

Boundary Scattering in Ballistic Graphene

We report magnetotransport measurements in ballistic graphene/hexagonal boron nitride mesoscopic wires where the charge carrier mean free path is comparable to wire width $W$. Magnetoresistance curves show characteristic peak structures where the peak field scales with the ratio of cyclotron radius $R_\textrm{c}$ and wire width $W$ as $W/R_\textrm{c} = 0.9 \pm 0.1$, due to diffusive boundary scattering. The obtained proportionality constant between $R_\textrm{c}$ and $W$ differs from that of a classical semiconductor 2D electron system where $W/R_\textrm{c} = 0.55$.

preprint2012arXiv

Shot Noise Induced by Electron-nuclear Spin-flip Scattering in a Nonequilibrium Quantum Wire

We study the shot noise (nonequilibrium current fluctuation) associated with dynamic nuclear polarization in a nonequilibrium quantum wire (QW) fabricated in a two-dimensional electron gas. We observe that the spin-polarized conductance quantization of the QW in the integer quantum Hall regime collapses when the QW is voltage biased to be driven to nonequilibrium. By measuring the shot noise, we prove that the spin polarization of electrons in the QW is reduced to $\sim 0.7$ instead of unity as a result of electron-nuclear spin-flip scattering. The result is supported by Knight shift measurements of the QW using resistively detected NMR.

preprint2011arXiv

Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of 30 ohm has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene.

preprint2010arXiv

Spatial gradient of dynamic nuclear spin polarization induced by breakdown of quantum Hall effect

We studied spatial distribution of dynamic nuclear polarization (DNP) in a Hall-bar device in a breakdown regime of the quantum Hall effect (QHE). We detected nuclear magnetic resonance (NMR) signals from the polarized nuclear spins by measuring the Hall voltage $V_{xy}$ using three pairs of voltage probes attached to the conducting channel of the Hall bar. We find that the amplitude of the NMR signal depends on the position of the Hall voltage probes and that the largest NMR signal is obtained from the pair of probes farthest from the electron-injecting electrode. Combined with results on pump-and-probe measurements, we conclude that the DNP induced by QHE breakdown develops along the electron-drift direction.

preprint2009arXiv

Strain-induced enhancement of electric quadrupole splitting in resistively detected nuclear magnetic resonance spectrum in quantum Hall systems

We show electrical coherent manipulation of quadrupole-split nuclear spin states in a GaAs/AlGaAs heterostructure on the basis of the breakdown of quantum Hall effect. The electric quadrupole splitting in nuclear spin energy levels is intentionally enhanced by applying an external stress to the heterostructure. Nuclear magnetic resonance spectra with clearly separated triple peaks are obtained, and Rabi oscillations are observed between the nuclear spin energy levels. The decay of the spin-echo signal is compared between the cases before and after the enhancement of quadrupole splitting.

preprint2007arXiv

Dynamic Nuclear Polarization in a Quantum Hall Corbino Disk

Electrical polarization of nuclear spins is studied in a Corbino disk under a breakdown regime of the quantum Hall effect (QHE). Since the edge channels are completely absent in the Corbino disk, we conclude that the electric current flowing in the bulk channel of a quantum Hall conductor is relevant to dynamic nuclear polarization (DNP). A pump and probe measurement demonstrates that DNP emerges near the critical voltage of the QHE breakdown. The agreement of the onset voltage of DNP with that of the QHE breakdown indicates that the underlying origin of DNP is closely related to that of the QHE breakdown.