Researcher profile

Tomoki Machida

Tomoki Machida contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2026arXiv

Emergent Cooperative Superstructures via Order-Disorder Kinetics in Molecule-Intercalated NbSe2

The design of quantum states at heterointerfaces has enabled a variety of emergent phenomena. Among them, molecular intercalation superlattices have attracted attention as tunable hybrid materials, formed by inserting organic molecules into van der Waals crystals, where molecular structure and chemistry provide new degrees of freedom. Traditionally, the intercalated molecules have been regarded as inactive spacers, while possible molecular ordering and its impact on the host lattice have remained largely unexplored. Here, we report the discovery of a cooperative superstructure (CSS) phase in molecule intercalated NbSe2, where ordering of the guest molecules induce a concomitant superstructure in the NbSe2 host lattice, characterized by a moiré structure due to incommensurability between the molecular layer and the inorganic lattice. Synchrotron X-ray diffraction reveals the emergence of CSS phase, accompanied by crystal symmetry lowering. Complementary resistivity and thermal-quench measurements show that the transition is governed by unusually slow order-disorder kinetics, so that the CSS phase can be selectively accessed under standard laboratory cooling rates. This kinetic behavior arises from slow molecular dynamics coupled to the host lattice, contrasting with fast charge or magnetic ordering in inorganic solids. Our findings establish molecular ordering as a route for engineering heterointerfaces, enabling thermally programmable superstructures.

preprint2020arXiv

Selective Etching of Hexagonal Boron Nitride by High-Pressure CF4 Plasma for Individual One-dimensional Ohmic Contacts to Graphene Layers

We describe a technique for making one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved by increasing the plasma pressure, which enables etching of h-BN, while graphene acts as an etch stop to protect underlying h-BN. A low-pressure O2 plasma anisotropically etches graphene in the vertical direction, which exposes graphene edges at h-BN sidewalls. Despite the O2 plasma bombardment, the lower h-BN layer functions as an insulating layer. Thus, this method allows us to pattern metal electrodes on h-BN over a second graphene layer. Subsequent electron-beam lithography and evaporation fabricate metal contacts at the graphene edges that are active down to cryogenic temperatures. This fabrication method is demonstrated by the preparation of a graphene Hall bar with a graphite back-gate and double bilayer-graphene Hall bar devices. The high flexibility of the device geometries enabled by this method creates access to a variety of experiments on electrostatically coupled graphene layers.

preprint2019arXiv

Deep-Learning-Based Image Segmentation Integrated with Optical Microscopy for Automatically Searching for Two-Dimensional Materials

Deep-learning algorithms enable precise image recognition based on high-dimensional hierarchical image features. Here, we report the development and implementation of a deep-learning-based image segmentation algorithm in an autonomous robotic system to search for two-dimensional (2D) materials. We trained the neural network based on Mask-RCNN on annotated optical microscope images of 2D materials (graphene, hBN, MoS2, and WTe2). The inference algorithm is run on a 1024 x 1024 px2 optical microscope images for 200 ms, enabling the real-time detection of 2D materials. The detection process is robust against changes in the microscopy conditions, such as illumination and color balance, which obviates the parameter-tuning process required for conventional rule-based detection algorithms. Integrating the algorithm with a motorized optical microscope enables the automated searching and cataloging of 2D materials. This development will allow researchers to utilize unlimited amounts of 2D materials simply by exfoliating and running the automated searching process.

preprint2013arXiv

Resistive detection of nuclear spins in a single quantum dot under Kondo effect regime

We study dynamic polarization and resistive detection of nuclear spins in a semiconductor quantum dot (QD) under the Kondo effect regime. We find that the differential conductance spectra of the QD exhibit hysteresis under the Kondo effect regime in magnetic fields. Relevance of nuclear spins to the hysteresis is confirmed by the detection of nuclear magnetic resonance signals by monitoring the differential conductance. We attribute the origin of the hysteresis to the dynamic nuclear spin polarization (DNP) induced in the QD. Using the DNP, we demonstrate nuclear spin relaxation rate measurements in the QD under the Kondo effect regime.

preprint2013arXiv

Spin Relaxation in Weak Localization Regime in Multilayer Graphene Spin Valves

The temperature dependence of the spin relaxation time in multilayer graphene (MLG) spin valve devices was measured using a non-local magnetoresistance (NLMR) measurement. A weak localization (WL) was observed from magnetoresistance (MR) measurements below 70 K, suggesting coherent transport of the charge carriers. Within the same temperature range, we observed a large increase in the spin relaxation time and spin diffusion length even though the diffusion constant Ds was suppressed by the WL. This demonstrated that the spin relaxation time in MLG could be significantly extended when the charge experiences quantum interference effect in the coherent charge transport regime.

preprint2012arXiv

Shot Noise Induced by Electron-nuclear Spin-flip Scattering in a Nonequilibrium Quantum Wire

We study the shot noise (nonequilibrium current fluctuation) associated with dynamic nuclear polarization in a nonequilibrium quantum wire (QW) fabricated in a two-dimensional electron gas. We observe that the spin-polarized conductance quantization of the QW in the integer quantum Hall regime collapses when the QW is voltage biased to be driven to nonequilibrium. By measuring the shot noise, we prove that the spin polarization of electrons in the QW is reduced to $\sim 0.7$ instead of unity as a result of electron-nuclear spin-flip scattering. The result is supported by Knight shift measurements of the QW using resistively detected NMR.

preprint2011arXiv

Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of 30 ohm has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene.

preprint2010arXiv

Spatial gradient of dynamic nuclear spin polarization induced by breakdown of quantum Hall effect

We studied spatial distribution of dynamic nuclear polarization (DNP) in a Hall-bar device in a breakdown regime of the quantum Hall effect (QHE). We detected nuclear magnetic resonance (NMR) signals from the polarized nuclear spins by measuring the Hall voltage $V_{xy}$ using three pairs of voltage probes attached to the conducting channel of the Hall bar. We find that the amplitude of the NMR signal depends on the position of the Hall voltage probes and that the largest NMR signal is obtained from the pair of probes farthest from the electron-injecting electrode. Combined with results on pump-and-probe measurements, we conclude that the DNP induced by QHE breakdown develops along the electron-drift direction.

preprint2009arXiv

Strain-induced enhancement of electric quadrupole splitting in resistively detected nuclear magnetic resonance spectrum in quantum Hall systems

We show electrical coherent manipulation of quadrupole-split nuclear spin states in a GaAs/AlGaAs heterostructure on the basis of the breakdown of quantum Hall effect. The electric quadrupole splitting in nuclear spin energy levels is intentionally enhanced by applying an external stress to the heterostructure. Nuclear magnetic resonance spectra with clearly separated triple peaks are obtained, and Rabi oscillations are observed between the nuclear spin energy levels. The decay of the spin-echo signal is compared between the cases before and after the enhancement of quadrupole splitting.