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Tunneling into the localized phase near Anderson transitions with Coulomb interaction

We study the tunneling density of states (TDOS) of a disordered electronic system with Coulomb interaction on the insulating side of the Anderson localization transition. The average TDOS shows a critical behavior at high energies, with a crossover to a soft Coulomb gap $Δ$ at low energies. We demonstrate that the single-particle excitations experience a localization transition (which belongs to the noninteracting universality class) at an energy $E=\pm E_c$. The mobility edge $E_c$ scales with the distance $μ_c-μ$ from the interacting critical point according to $E_c\propto (μ_c-μ)^{νz}$, where $ν$ and $z$ are the localization-length and the dynamical critical exponents. Local TDOS shows strong fluctuations and long-range correlations which reflect the multifractality associated with interacting and noninteracting fixed points as well the localization of low-energy excitations.