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Tunable Giant Rashba-type Spin Splitting in PtSe$_2$/MoSe$_2$ Heterostructure

We report a giant Rashba-type spin splitting in two-dimensional heterostructure PtSe$_2$/MoSe$_2$ with first-principles calculations. We obtain a large value of spin splitting energy 110 meV at the momentum offset $k_0$=0.23 Å$^{-1}$ around $\mathrmΓ$ point, arising from the emerging strong interfacial spin-orbital coupling induced by the hybridization between PtSe$_2$ and MoSe$_2$. Moreover, we find that the band dispersion close to valence band maximum around $Γ$ point can be well approximated by the generalized Rashba Hamiltonian $H(k_{||})=-\frac{\hbar^2 k_{||}^2}{2m}+c k_{||}+α_R \vecσ\cdot(\vec{k}_{||} \times \vec{z})$. It is found that the generalized Rashba constant $η_R=c+α_R$ in PtSe$_2$/MoSe$_2$ is as large as 1.3 eV$\cdot\textÅ$, and importantly $η_R$ can be effectively tuned by biaxial strain and external out-of-plane electrical field, presenting a potential application for the spin field-effect transistor. In addition, with the spin-valley physics at $\mathrm{K}/\mathrm{K}'$ points in monolayer MoSe$_2$, we propose a promising model for spin field-effect transistor with opto-valleytronic spin injection based on PtSe$_2$/MoSe$_2$ heterostructure.