Source author record

Youqi Ke

Youqi Ke appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mtrl-sci cond-mat.mes-hall

Catalog footprint

What is connected

3works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2019arXiv

Tunable Giant Rashba-type Spin Splitting in PtSe$_2$/MoSe$_2$ Heterostructure

We report a giant Rashba-type spin splitting in two-dimensional heterostructure PtSe$_2$/MoSe$_2$ with first-principles calculations. We obtain a large value of spin splitting energy 110 meV at the momentum offset $k_0$=0.23 Å$^{-1}$ around $\mathrmΓ$ point, arising from the emerging strong interfacial spin-orbital coupling induced by the hybridization between PtSe$_2$ and MoSe$_2$. Moreover, we find that the band dispersion close to valence band maximum around $Γ$ point can be well approximated by the generalized Rashba Hamiltonian $H(k_{||})=-\frac{\hbar^2 k_{||}^2}{2m}+c k_{||}+α_R \vecσ\cdot(\vec{k}_{||} \times \vec{z})$. It is found that the generalized Rashba constant $η_R=c+α_R$ in PtSe$_2$/MoSe$_2$ is as large as 1.3 eV$\cdot\textÅ$, and importantly $η_R$ can be effectively tuned by biaxial strain and external out-of-plane electrical field, presenting a potential application for the spin field-effect transistor. In addition, with the spin-valley physics at $\mathrm{K}/\mathrm{K}'$ points in monolayer MoSe$_2$, we propose a promising model for spin field-effect transistor with opto-valleytronic spin injection based on PtSe$_2$/MoSe$_2$ heterostructure.

preprint2015arXiv

Generalized non-equilibrium vertex correction method in coherent medium theory for quantum transport simulation of disordered nanoelectronics

In realistic nanoelectronics, disordered impurities/defects are inevitable and play important roles in electron transport. However, due to the lack of effective quantum transport method to do disorder average, the important effects of disorders remain largely un-explored or poorly understood. Here, we report a generalized non-equilibrium vertex correction method with coherent potential approximation for the non-equilibrium quantum transport simulation of disordered nanoelectronics. In this method, the disorder average of various Green's functions are computed by a generalized coherent potential approximation. A generalized non-equilibrium vertex correction algorithm is then developed to calculate disorder average of the product of any two real time single-particle Green's functions. We obtain nine non-equilibrium vertex corrections and find they can be solved by a set of simple linear equations. As a result, the averaged non-equilibrium density matrix and various important transport properties, including averaged current, disordered induced current fluctuation and the averaged shot noise, can all be efficiently computed in a unified simple scheme. Moreover, the relationship between the non-equilibrium vertex correction method and the non-equilibrium coherent potential approximation theory is clarified, and we prove the non-equilibrium coherent potential equals the non-equilibrium vertex correction and this equivalence is guaranteed by the Keldysh's formulas. In addition, a generalized form of conditionally averaged non-equilibrium Green's function is derived to incorporate with density functional theory to enable first-principles quantum transport simulation. Our approach provides a unified, efficient and self-consistent method for simulating non-equilibrium quantum transport through disordered nanoelectronics.

preprint2011arXiv

Nonlinear bias dependence of spin-transfer torque from atomic first principles

We report first-principles analysis on the bias dependence of spin-transfer torque (STT) in Fe/MgO/Fe magnetic tunnel junctions. The in-plane STT changes from linear to nonlinear dependence as the bias voltage is increased from zero. The angle dependence of STT is symmetric at low bias but asymmetric at high bias. The nonlinear behavior is marked by a threshold point in the STT versus bias curve. The high-bias nonlinear STT is found to be controlled by a resonant transmission channel in the anti-parallel configuration of the magnetic moments. Disorder scattering due to oxygen vacancies in MgO significantly changes the STT threshold bias.