Paper detail

Tripling the critical temperature of KFe$_{2}$As$_{2}$ by carrier switch

Superconductivity of high critical temperature ($T_{c}$) superconductors is usually realized through chemical dopant or application of pressure in a similar way to induce charge carriers of either electrons or holes into their parent compounds. For chemical doping, superconductivity behaves asymmetrically with the maximum $T_{c}$ often higher for optimal hole-doping than that of optimal electron-doping on the same parent compound. However, whether electron carriers could be in favour of higher $T_{c}$ than holes in such high-$T_{c}$ superconductors is unknown but attractive. Here we show that the application of pressure can drive KFe$_{2}$As$_{2}$ from hole- to electron-superconductivity after passing the previously reported $V$-shape or oscillation regime. The maximum $T_{c}$ in the electron-dominated region is tripled to the initial value of 3.5 K or the average in the low-pressure hole-dominated region. The structural transition takes place from the tetragonal to collapsed tetragonal phase when the carrier characteristic is changed upon compression. Our results unambiguously offer a new route to further improve superconductivity with huge $T_{c}$ enhancement for a compound through carrier switch. The strong electronic correlations in KFe$_{2}$As$_{2}$ are suggested to account for the unexpected enhancement of superconductivity in the collapsed tetragonal phase.