Abstract
The trench gate MOSFET has established itself as the most suitable power device for low to medium power applications by offering the lowest possible ON resistance among all MOS devices. The evolution of the trench gate power MOSFET has been discussed in this chapter, starting right from its beginnings to the recent trends. The innovations in the structural improvements to meet the requirements for an efficient operation, the progress in the fabrication technology, the characterization methods and various reliability issues have been emphasized.
Connections
Explore this paper’s authors, topics and related work.
Building this map preview
BZPEER is loading the nearby papers, people, topics and institutions for this page.
Reviews 0
Write a review
No reviews yet.
Discussion 0
Add a comment
No comments yet.