The Hall Effect and ionized impurity scattering in Si $_{(1-x)}$ Ge $_x$

preprint2014arXivOpen access

Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si $_{(1-x)}$ Ge $_x$ is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of Joelsson et.al. (JAP, 1997).

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The Hall Effect and ionized impurity scattering in Si $_{(1-x)}$ Ge $_x$

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The Hall Effect and ionized impurity scattering in Si(1−x)_{(1-x)}(1−x)​Gex_xx​

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The Hall Effect and ionized impurity scattering in Si $_{(1-x)}$ Ge $_x$