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W. Th. Wenckebach appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.
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Using Monte Carlo simulations, we demonstrate that including ionized impurity scattering in models of Si$_{(1-x)}$Ge$_x$ is vital in order to predict the correct Hall parameters. Our results show good agreement with the experimental data of Joelsson et.al. (JAP, 1997).
It should be possible to improve hot-hole laser performance by moving from bulk materials to a quantum well structure. The extra design parameters enable us to alter the band structure by changing the crystal orientation of the growth direction; to use the well width to shift the subband offsets, enabling the effect of the LO phonon scattering cut-off to be controlled; and to use modulation doping to ensure a high hole concentration to increase the gain without the dopants being present in the gain region. We present the first simulations of THz quantum well hot-hole lasers that can produce inversion and optical gain.