Suppression of antiferromagnetic order and hybridization gap by electron- and hole-doping in the Kondo semiconductor CeOs2_{2}Al10_{10}

preprint2014arXivOpen access

Abstract

The Kondo semiconductor CeOs2_{2}Al10_{10} exhibits an antiferromagnetic (AFM) order at TN=28.5T_\mathrm{N}= 28.5 K, whose temperature is unexpectedly high for the small ordered moment of 0.30.3 μB/μ_\mathrm{B}/Ce. We have studied the effects of electron- and hole-doping on the hybridization gap and AFM order by measuring the magnetization MM, magnetic susceptibility χχ, electrical resistivity ρρ, and specific heat CC on single crystals of Ce(Os1−x_{1-x}Irx_{x})2_{2}Al10_{10}(x≤0.15x \le 0.15) and Ce(Os1−y_{1-y}Rey_{y})2_{2}Al10_{10}(y≤0.1y \le 0.1). The results of M(B)M (B) indicates that the AFM ordered moment μAFμ_\mathrm{AF} changes the direction from the cc-axis for x=0x = 0 to the aa-axis for x=0.03x = 0.03. With increasing xx up to 0.15, TNT_\mathrm{N} gradually decreases although the 4f4f electron state becomes localized and the magnitude of μAFμ_\mathrm{AF} is increased to 11 μB/μ_\mathrm{B}/Ce. With increasing yy, the 4f4f electron state is more delocalized and the AFM order disappears at a small doping level y=0.05y = 0.05. In both electron- and hole-doped systems, the suppression of TNT_\mathrm{N} is well correlated with the increase of the Sommerfeld coefficient γγ in C(T)C(T). Furthermore, the simultaneous suppression of TNT_\mathrm{N} and the semiconducting gap in ρ(T)ρ(T) at T>TNT > T_\mathrm{N} indicates that the presence of the hybridization gap is indispensable for the unusual AFM order in CeOs2_{2}Al10_{10}.

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