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Simultaneous Localization of Electrons in different $Δ$-valleys in Ge/Si Quantum Dot Structures

In the present work the possibility of simultaneous localization of two electrons in $Δ^{100}$ and $Δ^{001}$ valleys in ordered structures with Ge/Si(001) quantum dots (QD) was verified experimentally by the electron spin resonance (ESR) method. The ESR spectra obtained for the ordered ten-layered QD structure in the dark show the signal corresponding to electron localization in Si at the Ge QD base edges in $Δ^{100}$, $Δ^{010}$ valleys ($g_{zz}$=1.9985, $g_{in-plane}$=1.999). Light illumination causes the appearance of a new ESR line ($g_{zz}$=1.999) attributed to electrons in the $Δ^{001}$ valley localized at QD apexes. The observed effect is explained by enhancement of electron confinement near the QD apex by Coloumb attraction to the photogenerated hole trapped in a Ge QD.