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Natalia Stepina

Natalia Stepina appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2015arXiv

Electron localization in self-assembled Si/Ge(111) quantum dots

Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor $g=2.0022\pm0.0001$ and ESR line width $ΔH\approx1.2$ Oe was observed and attributed to the electrons localized in QDs. The g-factor value was explained by taking into account the energy band modification due to strain effects and quantum confinement. A strong Ge-Si intermixing in QD structures grown on Ge(001) is assumed to be main reason of unobserved ESR signal from QDs. The transport behavior confirms the efficient electron localization in Si QDs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Simultaneous Localization of Electrons in different $Δ$-valleys in Ge/Si Quantum Dot Structures

In the present work the possibility of simultaneous localization of two electrons in $Δ^{100}$ and $Δ^{001}$ valleys in ordered structures with Ge/Si(001) quantum dots (QD) was verified experimentally by the electron spin resonance (ESR) method. The ESR spectra obtained for the ordered ten-layered QD structure in the dark show the signal corresponding to electron localization in Si at the Ge QD base edges in $Δ^{100}$, $Δ^{010}$ valleys ($g_{zz}$=1.9985, $g_{in-plane}$=1.999). Light illumination causes the appearance of a new ESR line ($g_{zz}$=1.999) attributed to electrons in the $Δ^{001}$ valley localized at QD apexes. The observed effect is explained by enhancement of electron confinement near the QD apex by Coloumb attraction to the photogenerated hole trapped in a Ge QD.

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