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Natalia Stepina

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2015arXiv

Electron localization in self-assembled Si/Ge(111) quantum dots

Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor $g=2.0022\pm0.0001$ and ESR line width $ΔH\approx1.2$ Oe was observed and attributed to the electrons localized in QDs. The g-factor value was explained by taking into account the energy band modification due to strain effects and quantum confinement. A strong Ge-Si intermixing in QD structures grown on Ge(001) is assumed to be main reason of unobserved ESR signal from QDs. The transport behavior confirms the efficient electron localization in Si QDs.

preprint2015arXiv

Simultaneous Localization of Electrons in different $Δ$ -valleys in Ge/Si Quantum Dot Structures

In the present work the possibility of simultaneous localization of two electrons in $Δ^{100}$ and $Δ^{001}$ valleys in ordered structures with Ge/Si(001) quantum dots (QD) was verified experimentally by the electron spin resonance (ESR) method. The ESR spectra obtained for the ordered ten-layered QD structure in the dark show the signal corresponding to electron localization in Si at the Ge QD base edges in $Δ^{100}$ , $Δ^{010}$ valleys ( $g_{zz}$ =1.9985, $g_{in-plane}$ =1.999). Light illumination causes the appearance of a new ESR line ( $g_{zz}$ =1.999) attributed to electrons in the $Δ^{001}$ valley localized at QD apexes. The observed effect is explained by enhancement of electron confinement near the QD apex by Coloumb attraction to the photogenerated hole trapped in a Ge QD.

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Natalia Stepina

Research overview

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2 publications

Electron localization in self-assembled Si/Ge(111) quantum dots

Simultaneous Localization of Electrons in different $Δ$ -valleys in Ge/Si Quantum Dot Structures

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Natalia Stepina

Research overview

Is this your work?

2 publications

Electron localization in self-assembled Si/Ge(111) quantum dots

Simultaneous Localization of Electrons in different ΔΔΔ-valleys in Ge/Si Quantum Dot Structures

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Simultaneous Localization of Electrons in different $Δ$ -valleys in Ge/Si Quantum Dot Structures