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Paper detail

Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage. After the leakage current is suppressed, Coulomb oscillations of the QD and the current-voltage characteristics of the S-SET are observed at a temperature of 0.3 K. Coupling of the S-SET to the QD is confirmed by using the S-SET to perform sensing of the QD charge state.

preprint2011arXivOpen access
Mingyun YuanFeng PanZhen YangT. J. GilheartFei ChenD. E. SavageM. G. LagallyM. A. ErikssonA. J. Rimberg
cond-mat.mes-hall
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Mingyun YuanFeng PanZhen YangT. J. GilheartFei ChenD. E. SavageM. G. LagallyM. A. ErikssonA. J. Rimberg

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