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Source author record

A. J. Rimberg

A. J. Rimberg appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-conquant-phphysics.comp-ph

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Published work

9 published item(s)

preprint2022arXiv

Feedback stabilization of the resonant frequency in tunable microwave cavities with single-photon occupancy

We successfully demonstrate low-frequency noise suppression in the resonant frequency fluctuations of a cavity-embedded Cooper pair transistor (cCPT) driven at single-photon occupancy. In particular, we report a reduction in the resonant frequency fluctuations caused by the internal charge noise over a bandwidth of $\sim$1.4 kHz when the cavity is driven at an average photon number $n=10$, and a bandwidth of 11 Hz for average $n=1$. The gate-dependent tunability of the cCPT allows us to implement a feedback-scheme, derived from the Pound-Drever-Hall locking technique. This reduces fluctuations due to intrinsic charge-noise, which otherwise interferes with the cCPT's operation as a near quantum-limited electrometer. We believe our technique can be generalized to achieve frequency stabilization in tunable microwave resonators that play a vital role in today's quantum computing architecture, thereby moderating the limitations in detection caused by the intrinsic $1/f$-noise on such circuit devices. The work discusses the various aspects relating to the operation of a fully functional feedback loop down to the single-photon level.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Iterative solutions to the steady state density matrix for optomechanical systems

We present a sparse matrix permutation from graph theory that gives stable incomplete Lower-Upper (LU) preconditioners necessary for iterative solutions to the steady state density matrix for quantum optomechanical systems. This reordering is efficient, adding little overhead to the computation, and results in a marked reduction in both memory and runtime requirements compared to other solution methods, with performance gains increasing with system size. Either of these benchmarks can be tuned via the preconditioner accuracy and solution tolerance. This reordering optimizes the condition number of the approximate inverse, and is the only method found to be stable at large Hilbert space dimensions. This allows for steady state solutions to otherwise intractable quantum optomechanical systems.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Signatures of Valley Kondo Effect in Si/SiGe Quantum Dots

We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side peaks, revealing a zero-field valley splitting between 0.28 to 0.34 meV. A zero-bias conductance peak for non-zero magnetic field, a phenomenon consistent with valley non- conservation in tunneling, is observed in two samples.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A cavity-Cooper pair transistor scheme for investigating quantum optomechanics in the ultra-strong coupling regime

We propose a scheme involving a Cooper pair transistor (CPT) embedded in a superconducting microwave cavity, where the CPT serves as a charge tunable quantum inductor to facilitate ultra-strong coupling between photons in the cavity and a nano- to meso-scale mechanical resonator. The mechanical resonator is capacitively coupled to the CPT, such that mechanical displacements of the resonator cause a shift in the CPT inductance and hence the cavity's resonant frequency. The amplification provided by the CPT is sufficient for the zero point motion of the mechanical resonator alone to cause a significant change in the cavity resonance. Conversely, a single photon in the cavity causes a shift in the mechanical resonator position on the order of its zero point motion. As a result, the cavity-Cooper pair transistor (cCPT) coupled to a mechanical resonator will be able to access a regime in which single photons can affect single phonons and vice versa. Realizing this ultra-strong coupling regime will facilitate the creation of non-classical states of the mechanical resonator, as well as the means to accurately characterize such states by measuring the cavity photon field.

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preprint2013arXiv

A Single-Cooper-Pair Josephson Laser

The advent of quantum optical techniques based on superconducting circuits has opened new regimes in the study of the non-linear interaction of light with matter. Of particular interest has been the creation of non-classical states of light, which are essential for continuous-variable quantum information processing, and could enable quantum-enhanced measurement sensitivity. Here we demonstrate a device consisting of a superconducting artificial atom, the Cooper pair transistor, embedded in a superconducting microwave cavity that may offer a path toward simple, continual production of non-classical photons. By applying a dc voltage to the atom, we use the ac Josephson effect to inject photons into the cavity. The backaction of the photons on single-Cooper-pair tunneling events results in a new regime of simultaneous quantum coherent transport of Cooper pairs and microwave photons. This single-pair Josephson laser offers great potential for the production of amplitude-squeezed photon states and a rich environment for the study of the quantum dynamics of nonlinear systems.

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preprint2013arXiv

Universal quantum fluctuations of a cavity mode driven by a Josephson junction

We analyze the quantum dynamics of a superconducting cavity coupled to a voltage biased Josephson junction. The cavity is strongly excited at resonances where the voltage energy lost by a Cooper pair traversing the circuit is a multiple of the cavity photon energy. We find that the resonances are accompanied by substantial squeezing of the quantum fluctuations of the cavity over a broad range of parameters and are able to identify regimes where the fluctuations in the system take on universal values.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity

We report a technique for applying a dc voltage or current bias to the center conductor of a high-quality factor superconducting microwave cavity without significantly disturbing selected cavity modes. This is accomplished by incorporating dc bias lines into the cavity at specific locations. The measured S-matrix parameters of the system are in good agreement with theoretical predictions and simulations. We find that at 4 K the quality factor of the cavity degrades by less than 1% under the application of a dc bias.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when the bias voltage becomes greater than the singlet-triplet splitting for the (2,0) electron state. We present eight independent data sets, four in the forward bias (spin-blockade) regime and four in the reverse bias (lifetime-enhanced transport) regime, and show that all eight data sets can be fit to one consistent set of parameters. We also perform a detailed analysis of the reverse bias (LET) regime, using transport rate equations that include both singlet and triplet transport channels. The model also includes the energy dependent tunneling of electrons across the quantum barriers, and resonant and inelastic tunneling effects. In this way, we obtain excellent fits to the experimental data, and we obtain quantitative estimates for the tunneling rates and transport currents throughout the reverse bias regime. We provide a physical understanding of the different blockade regimes and present detailed predictions for the conditions under which LET may be observed.

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preprint2011arXiv

Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to reduce gate leakage. After the leakage current is suppressed, Coulomb oscillations of the QD and the current-voltage characteristics of the S-SET are observed at a temperature of 0.3 K. Coupling of the S-SET to the QD is confirmed by using the S-SET to perform sensing of the QD charge state.

0 citations0 reviewsNo code linkedOpen access