Abstract

We have studied the 1/f1/f voltage noise of gold nano-contacts in electromigrated and mechanically controlled break-junctions having resistance values RR that can be tuned from 10 ΩΩ (many channels) to 10 kΩΩ (single atom contact). The noise is caused by resistance fluctuations as evidenced by the SV∝V2S_V\propto V^2 dependence of the power spectral density SVS_V on the applied DC voltage VV. As a function of RR the normalized noise SV/V2S_V/V^2 shows a pronounced cross-over from ∝R3\propto R^3 for low-ohmic junctions to ∝R1.5\propto R^{1.5} for high-ohmic ones. The measured powers of 3 and 1.5 are in agreement with 1/f1/f-noise generated in the bulk and reflect the transition from diffusive to ballistic transport.

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