Source author record

C. Schönenberger

C. Schönenberger appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

25works
5topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

25 published item(s)

preprint2021arXiv

Magnetic, thermal, and topographic imaging with a nanometer-scale SQUID-on-cantilever scanning probe

Scanning superconducting quantum interference device (SQUID) microscopy is a magnetic imaging technique combining high-field sensitivity with nanometer-scale spatial resolution. State-of-the-art SQUID-on-tip probes are now playing an important role in mapping correlation phenomena, such as superconductivity and magnetism, which have recently been observed in two-dimensional van der Waals materials. Here, we demonstrate a scanning probe that combines the magnetic and thermal imaging provided by an on-tip SQUID with the tip-sample distance control and topographic contrast of a non-contact atomic force microscope (AFM). We pattern the nanometer-scale SQUID, including its weak-link Josephson junctions, via focused ion beam milling at the apex of a cantilever coated with Nb, yielding a sensor with an effective diameter of 365 nm, field sensitivity of 9.5 $\text{nT}/\sqrt{\text{Hz}}$ and thermal sensitivity of 620 $\text{nK}/\sqrt{\text{Hz}}$, operating in magnetic fields up to 1.0 T. The resulting SQUID-on-lever is a robust AFM-like scanning probe that expands the reach of sensitive nanometer-scale magnetic and thermal imaging beyond what is currently possible.

preprint2020arXiv

Magnetic field independent sub-gap states in hybrid Rashba nanowires

Sub-gap states in semiconducting-superconducting nanowire hybrid devices are controversially discussed as potential topologically non-trivial quantum states. One source of ambiguity is the lack of an energetically and spatially well defined tunnel spectrometer. Here, we use quantum dots directly integrated into the nanowire during the growth process to perform tunnel spectroscopy of discrete sub-gap states in a long nanowire segment. In addition to sub-gap states with a standard magnetic field dependence, we find topologically trivial sub-gap states that are independent of the external magnetic field, i.e. that are pinned to a constant energy as a function of field. We explain this effect qualitatively and quantitatively by taking into account the strong spin-orbit interaction in the nanowire, which can lead to a decoupling of Andreev bound states from the field due to a spatial spin texture of the confined eigenstates.

preprint2016arXiv

Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25\% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find {\it two} sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transition between singlet and a triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin-based Bell inequalities.

preprint2016arXiv

Spin transport in fully hexagonal boron nitride encapsulated graphene

We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO2/Si substrate and single-layer thin-hBN flake as a tunnel barrier. Full encapsulation prevents the graphene from coming in contact with any polymer/chemical during the lithography and thus gives homogeneous charge and spin transport properties across different regions of the encapsulated graphene. Further, even with the multiple electrodes in between the injection and the detection electrodes which are in conductivity mismatch regime, we observe spin transport over 12.5 um long distance under the thin-hBN encapsulated graphene channel, demonstrating the clean interface and the pin-hole free nature of the thin-hBN as an efficient tunnel barrier.

preprint2016arXiv

Subgap resonant quasiparticle transport in normal-superconductor quantum dot devices

We report thermally activated transport resonances for biases below the superconducting energy gap in a carbon nanotube (CNT) quantum dot (QD) device with a superconducting Pb and a normal metal contact. These resonances are due to the superconductor's finite quasi-particle population at elevated temperatures and can only be observed when the QD life-time broadening is considerably smaller than the gap. This condition is fulfilled in our QD devices with optimized Pd/Pb/In multi-layer contacts, which result in reproducibly large and "clean" superconducting transport gaps with a strong conductance suppression for subgap biases. We show that these gaps close monotonically with increasing magnetic field and temperature. The accurate description of the subgap resonances by a simple resonant tunneling model illustrates the ideal characteristics of the reported Pb contacts and gives an alternative access to the tunnel coupling strengths in a QD.

preprint2016arXiv

Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, Indium Arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only few techniques were developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

preprint2015arXiv

Fork stamping of pristine carbon nanotubes onto ferromagnetic contacts for spin-valve devices

We present a fabrication scheme called 'fork stamping' optimized for the dry transfer of individual pristine carbon nanotubes (CNTs) onto ferromagnetic contact electrodes fabricated by standard lithography. We demonstrate the detailed recipes for a residue-free device fabrication and in-situ current annealing on suspended CNT spin-valve devices with ferromagnetic Permalloy (Py) contacts and report preliminary transport characterization and magnetoresistance experiments at cryogenic temperatures. This scheme can directly be used to implement more complex device structures, including multiple gates or superconducting contacts.

preprint2015arXiv

Giga-Hertz quantized charge pumping in bottom gate defined InAs nanowire quantum dots

Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, i.e., the controlled transport of individual electrons through an InAs NW quantum dot (QD) device at frequencies up to $1.3\,$GHz. The QD is induced electrostatically in the NW by a series of local bottom gates in a state of the art device geometry. A periodic modulation of a single gate is enough to obtain a dc current proportional to the frequency of the modulation. The dc bias, the modulation amplitude and the gate voltages on the local gates can be used to control the number of charges conveyed per cycle. Charge pumping in InAs NWs is relevant not only in metrology as a current standard, but also opens up the opportunity to investigate a variety of exotic states of matter, e.g. Majorana modes, by single electron spectroscopy and correlation experiments.

preprint2015arXiv

Magnetic field tuning and quantum interference in a Cooper pair splitter

Cooper pair splitting (CPS) is a process in which the electrons of naturally occurring spin-singlet pairs in a superconductor are spatially separated using two quantum dots. Here we investigate the evolution of the conductance correlations in an InAs CPS device in the presence of an external magnetic field. In our experiments the gate dependence of the signal that depends on both quantum dots continuously evolves from a slightly asymmetric Lorentzian to a strongly asymmetric Fano-type resonance with increasing field. These experiments can be understood in a simple three - site model, which shows that the nonlocal CPS leads to symmetric line shapes, while the local transport processes can exhibit an asymmetric shape due to quantum interference. These findings demonstrate that the electrons from a Cooper pair splitter can propagate coherently after their emission from the superconductor and how a magnetic field can be used to optimize the performance of a CPS device. In addition, the model calculations suggest that the estimate of the CPS efficiency in the experiments is a lower bound for the actual efficiency.

preprint2015arXiv

Resonant and inelastic Andreev tunneling observed on a carbon nanotube quantum dot

We report the observation of two fundamental sub-gap transport processes through a quantum dot (QD) with a superconducting contact. The device consists of a carbon nanotube contacted by a Nb superconducting and a normal metal contact. First, we find a single resonance with position, shape and amplitude consistent with the theoretically predicted resonant Andreev tunneling (AT) through a single QD level. Second, we observe a series of discrete replicas of resonant AT at a separation of $\sim145\,μ$eV, with a gate, bias and temperature dependence characteristic for boson-assisted, inelastic AT, in which energy is exchanged between a bosonic bath and the electrons. The magnetic field dependence of the replica's amplitudes and energies suggest that two different bosons couple to the tunnel process.

preprint2015arXiv

Shot noise of a quantum dot measured with GHz stub impedance matching

The demand for a fast high-frequency read-out of high impedance devices, such as quantum dots, necessitates impedance matching. Here we use a resonant impedance matching circuit (a stub tuner) realized by on-chip superconducting transmission lines to measure the electronic shot noise of a carbon nanotube quantum dot at a frequency close to 3 GHz in an efficient way. As compared to wide-band detection without impedance matching, the signal to noise ratio can be enhanced by as much as a factor of 800 for a device with an impedance of 100 k$Ω$. The advantage of the stub resonator concept is the ease with which the response of the circuit can be predicted, designed and fabricated. We further demonstrate that all relevant matching circuit parameters can reliably be deduced from power reflectance measurements and then used to predict the power transmission function from the device through the circuit. The shot noise of the carbon nanotube quantum dot in the Coulomb blockade regime shows an oscillating suppression below the Schottky value of $2eI$, as well an enhancement in specific regions.

preprint2014arXiv

Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications

We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity is found to be consistent with its DC counterpart in the full gate voltage range. Furthermore, in order to access the potential of high-frequency sensing for applications, we demonstrate time-dependent gating in solution with nanosecond time resolution.

preprint2014arXiv

Local electrical tuning of the nonlocal signals in a Cooper pair splitter

A Cooper pair splitter consists of a central superconducting contact, S, from which electrons are injected into two parallel, spatially separated quantum dots (QDs). This geometry and electron interactions can lead to correlated electrical currents due to the spatial separation of spin-singlet Cooper pairs from S. We present experiments on such a device with a series of bottom gates, which allows for spatially resolved tuning of the tunnel couplings between the QDs and the electrical contacts and between the QDs. Our main findings are gate-induced transitions between positive conductance correlation in the QDs due to Cooper pair splitting and negative correlations due to QD dynamics. Using a semi-classical rate equation model we show that the experimental findings are consistent with in-situ electrical tuning of the local and nonlocal quantum transport processes. In particular, we illustrate how the competition between Cooper pair splitting and local processes can be optimized in such hybrid nanostructures.

preprint2012arXiv

Kondo effect and spin-active scattering in ferromagnet-superconductor junctions

We study the interplay of superconducting and ferromagnetic correlations on charge transport in different geometries with a focus on both a quantum point contact as well as a quantum dot in the even and the odd state with and without spin-active scattering at the interface. In order to obtain a complete picture of the charge transport we calculate the full counting statistics in all cases and compare the results with experimental data. We show that spin-active scattering is an essential ingredient in the description of quantum point contacts. This holds also for quantum dots in an even charge state whereas it is strongly suppressed in a typical Kondo situation. We explain this feature by the strong asymmetry of the hybridisations with the quantum dot and show how Kondo peak splitting in a magnetic field can be used for spin filtering. For the quantum dot in the even state spin-active scattering allows for an explanation of the experimentally observed mini-gap feature.

preprint2012arXiv

Near-unity Cooper pair splitting efficiency

The two electrons of a Cooper pair in a conventional superconductor form a singlet and therefore a maximally entangled state. Recently, it was demonstrated that the two particles can be extracted from the superconductor into two spatially separated contacts via two quantum dots (QDs) in a process called Cooper pair splitting (CPS). Competing transport processes, however, limit the efficiency of this process. Here we demonstrate efficiencies up to 90%, significantly larger than required to demonstrate interaction-dominated CPS, and on the right order to test Bell's inequality with electrons. We compare the CPS currents through both QDs, for which large apparent discrepancies are possible. The latter we explain intuitively and in a semi-classical master equation model. Large efficiencies are required to detect electron entanglement and for prospective electronics-based quantum information technologies.

preprint2011arXiv

Conductance fluctuations in graphene devices with superconducting contacts in different charge density regimes

Conductions fluctuations (CF) are studied in single layer graphene devices with superconducting source and drain contacts made from aluminium. The CF are found to be enhanced by superconductivity by a factor of 1.4 to 2. This (near) doubling of the CF indicates that the phase coherence length is l_phi >= L/2. As compared to previous work, we find a relatively weak dependence of the CF on the gate voltage, and hence on the carrier density. We also demonstrate that whether the CF are larger or smaller at the charge neutrality point can be strongly dependent on the series resistance R_C, which needs to be subtracted.

preprint2011arXiv

Finite bias Cooper pair splitting

In a device with a superconductor coupled to two parallel quantum dots (QDs) the electrical tunability of the QD levels can be used to exploit non-classical current correlations due to the splitting of Cooper pairs. We experimentally investigate the effect of a finite potential difference across one quantum dot on the conductance through the other completely grounded QD in a Cooper pair splitter fabricated on an InAs nanowire. We demonstrate that the electrical transport through the device can be tuned by electrical means to be dominated either by Cooper pair splitting (CPS), or by elastic co-tunneling (EC). The basic experimental findings can be understood by considering the energy dependent density of states in a QD. The reported experiments add bias-dependent spectroscopy to the investigative tools necessary to develop CPS-based sources of entangled electrons in solid-state devices.

preprint2011arXiv

Gate-tunable split Kondo effect in a carbon nanotube quantum dot

We show a detailed investigation of the split Kondo effect in a carbon nanotube quantum dot with multiple gate electrodes. It is found that the splitting decreases for increasing magnetic field, to result in a recovered zero-bias Kondo resonance at finite magnetic field. Surprisingly, in the same charge state, but under different gate-configurations, the splitting does not disappear for any value of the magnetic field, but we observe an avoided crossing of two high-conductance lines. We think that our observations can be understood in terms of a two-impurity Kondo effect with two spins coupled antiferromagnetically. The exchange coupling between the two spins can be influenced by a local gate, and the non-recovery of the Kondo resonance for certain gate configurations is explained by the existence of a small antisymmetric contribution to the exchange interaction between the two spins.

preprint2011arXiv

Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors

Recent studies on nanoscale field-effect sensors reveal the crucial importance of the low frequency noise for determining the ultimate detection limit. In this letter, the 1/f-type noise of Si nanoribbon field-effect sensors is investigated. We demonstrate that the signal-to-noise ratio can be increased by almost two orders of magnitude if the nanoribbon is operated in an optimal gate voltage range. In this case, the additional noise contribution from the contact regions is minimized, and an accuracy of 0.5% of a pH shift in one Hz bandwidth can be reached.

preprint2011arXiv

Spontaneously gapped ground state in suspended bilayer graphene

Bilayer graphene bears an eight-fold degeneracy due to spin, valley and layer symmetry, allowing for a wealth of broken symmetry states induced by magnetic or electric fields, by strain, or even spontaneously by interaction. We study the electrical transport in clean current annealed suspended bilayer graphene. We find two kind of devices. In bilayers of type B1 the eight-fold zero-energy Landau level (LL) is partially lifted above a threshold field revealing an insulating nu=0 quantum Hall state at the charge neutrality point (CNP). In bilayers of type B2 the LL lifting is full and a gap appears in the differential conductance even at zero magnetic field, suggesting an insulating spontaneously broken symmetry state. Unlike B1, the minimum conductance in B2 is not exponentially suppressed, but remains finite with a value G < e^2/h even in a large magnetic field. We suggest that this phase of B2 is insulating in the bulk and bound by compressible edge states.

preprint2009arXiv

Superconductivity enhanced conductance fluctuations in few layer graphene nanoribbons

We investigate the mesoscopic disorder induced rms conductance variance $δG$ in a few layer graphene nanoribbon (FGNR) contacted by two superconducting (S) Ti/Al contacts. By sweeping the back-gate voltage, we observe pronounced conductance fluctuations superimposed on a linear background of the two terminal conductance G. The linear gate-voltage induced response can be modeled by a set of inter-layer and intra-layer capacitances. $δG$ depends on temperature T and source-drain voltage $V_{sd}$. $δG$ increases with decreasing T and $|V_{sd}|$. When lowering $|V_{sd}|$, a pronounced cross-over at a voltage corresponding to the superconducting energy gap $Δ$ is observed. For $|V_{sd}|\ltequiv Δ$ the fluctuations are markedly enhanced. Expressed in the conductance variance $G_{GS}$ of one graphene-superconducutor (G-S) interface, values of 0.58 e^2/h are obtained at the base temperature of 230 mK. The conductance variance in the sub-gap region are larger by up to a factor of 1.4-1.8 compared to the normal state. The observed strong enhancement is due to phase coherent charge transfer caused by Andreev reflection at the nanoribbon-superconductor interface.

preprint2008arXiv

Scaling of 1/f noise in tunable break-junctions

We have studied the $1/f$ voltage noise of gold nano-contacts in electromigrated and mechanically controlled break-junctions having resistance values $R$ that can be tuned from 10 $Ω$ (many channels) to 10 k$Ω$ (single atom contact). The noise is caused by resistance fluctuations as evidenced by the $S_V\propto V^2$ dependence of the power spectral density $S_V$ on the applied DC voltage $V$. As a function of $R$ the normalized noise $S_V/V^2$ shows a pronounced cross-over from $\propto R^3$ for low-ohmic junctions to $\propto R^{1.5}$ for high-ohmic ones. The measured powers of 3 and 1.5 are in agreement with $1/f$-noise generated in the bulk and reflect the transition from diffusive to ballistic transport.

preprint2005arXiv

Electrical conductance of atomic contacts in liquid environments

We present measurements of the electrical conductance $G$ at room temperature of mechanically controllable break junctions (MCBJ) fabricated from Au in different solvents (octane, DCM, DMSO, and toluene) and compare with measurements in air and vacuum. In the high conductance regime $G \agt G_0=2e^2/h$, the environment plays a minor role, as proven by the measured conductance histograms, which do not depend on the environment. In contrast, the environment significantly affects the electrical properties in the low conductance (tunneling) regime {$G << G_0$}. Here, we observe a systematic and reproducible lowering of the tunneling barrier height $ϕ$. At shorter distances, a transition to a strongly suppressed apparent barrier height is observed in octane, providing evidence for the layering of solvent molecules at small inter-electrodes separations. The presented experimental configuration offers interesting perspectives for the electrical characterization of single molecules in a controlled environment.

preprint2004arXiv

Electrical Spin Injection in Multi-Wall carbon NanoTubes with transparent ferromagnetic contacts

We report on electrical spin injection measurements on MWNTs . We use a ferromagnetic alloy Pd$_{1-x}$Ni$_{x}$ with x $\approx$ 0.7 which allows to obtain devices with resistances as low as 5.6 $kΩ$ at 300 $K$. The yield of device resistances below 100 $kΩ$, at 300 $K$, is around 50%. We measure at 2 $K$ a hysteretic magneto-resistance due to the magnetization reversal of the ferromagnetic leads. The relative difference between the resistance in the antiparallel (AP) orientation and the parallel (P) orientation is about 2%.

preprint1998arXiv

The 1/3-shot noise suppression in diffusive nanowires

We report low-temperature shot noise measurements of short diffusive Au wires attached to electron reservoirs of varying sizes. The measured noise suppression factor compared to the classical noise value $2e\left| I\right| $ strongly depends on the electric heat conductance of the reservoirs. For small reservoirs injection of hot electrons increases the measured noise and hence the suppression factor. The universal 1/3-suppression factor can only asymptotically be reached for macroscopically large and thick electron reservoirs. A heating model based on the Wiedemann-Franz law is used to explain this effect.