Abstract

X-ray absorption (XAS) and Resonant Inelastic X-ray Scattering (RIXS) spectra of LaPt2_2Si2_2 single crystal at the Si L and La N edges are presented. The data are interpreted in terms of density functional theory, showing that the Si spectra can be described in terms of Si ss and dd local partial density of states (LPDOS), and the La spectra are due to quasi-atomic local 4f4f excitations. Calculations show that Pt dd-LPDOS dominates the occupied states, and a sharp localized La ff state is found in the unoccupied states, in line with the observations.

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