Abstract
X-ray absorption (XAS) and Resonant Inelastic X-ray Scattering (RIXS) spectra of LaPtSi single crystal at the Si L and La N edges are presented. The data are interpreted in terms of density functional theory, showing that the Si spectra can be described in terms of Si and local partial density of states (LPDOS), and the La spectra are due to quasi-atomic local excitations. Calculations show that Pt -LPDOS dominates the occupied states, and a sharp localized La state is found in the unoccupied states, in line with the observations.
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